Hydrothermal synthesis of ZnGa₂O₄ nanophosphors with high internal quantum efficiency for near-infrared pc-LEDs

Abstract

NIR luminescent materials have garnered widespread attention since their exceptional properties, with high tissue penetration, low absorption and high signal-to-noise ratio in the field of optical imaging. However, producing nanophosphors...

Near-infrared afterglow enhancement of ZnGa2O4:Cr3+via regulating trap distribution guided by the VRBE diagram

“…Specifically, the emission peak at 685 nm belongs to the luminescence of Cr 3+ in an undistorted crystal field, the emission peak at 694 nm belongs to the luminescence of Cr 3+ in a distorted octahedral crystal field due to the anti-site defects, the emission peak at 680 nm belongs to the anti-Stokes sideband, and the emission peaks at 708 nm and 714 nm belong to the Stokes phonon sidebands. 33–35 Noteworthily, Ln 3+ (Ln = Sm, Yb, Tb) ions have little influence on the emission peak positions of the samples, but they have a remarkable enhancement effect on the PL intensity of the samples, which may be ascribed to the superposition effect of the release of the trapped electrons in the produced shallow traps. Moreover, for the Sm 3+ -doped sample, the enhanced absorption confirmed by Fig.…”