2017
DOI: 10.1016/j.jallcom.2017.05.317
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Hydrothermal synthesis of ZnO nanowires on rf sputtered Ga and Al co-doped ZnO thin films for solar cell application

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Cited by 43 publications
(19 citation statements)
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“…A few 243 interference fringes can be observed in the trans-244 mittance spectra, indicating weak surface roughness. 45 The optical bandgap energy, E g ,o f the materials was evaluated using the Tauc relation, 22,46 aht…”
Section: Sample Preparationmentioning
confidence: 99%
“…A few 243 interference fringes can be observed in the trans-244 mittance spectra, indicating weak surface roughness. 45 The optical bandgap energy, E g ,o f the materials was evaluated using the Tauc relation, 22,46 aht…”
Section: Sample Preparationmentioning
confidence: 99%
“…Figure shows the XRD patterns for the L 9 orthogonal array for AGZO films that are grown on PET substrates. The AGZO films exhibit a (0 0 2) diffraction peak at 2 θ ≈ 34.34°, which indicates that the films are polycrystalline with a hexagonal wurtzite crystal structure and a preferred orientation with the c ‐axis perpendicular to the substrate . The AGZO thin film that is deposited using a rf power of 40 W (Nos.…”
Section: Resultsmentioning
confidence: 99%
“…Nonetheless, the large-scale fabrication of ZnO-NWs is hindered by a number of factors. 20 Hydrothermal synthesis is a straight forward scalable approach, which can be performed under atmospheric pressure at low temperatures (<100 C) using a wide variety of substrates; 21 however, it is inapplicable to bare silicon substrates due to high internal stress caused by lattice mismatch between ZnO-NWs and the substrate as well as a large difference in the coe cient of thermal expansion. 21,22 The sputter deposition of a ZnO seed layer on the surface of silicon substrate has been shown to reduce lattice mismatch and alignment the nanowires to improve array density.…”
Section: Introductionmentioning
confidence: 99%
“…20 Hydrothermal synthesis is a straight forward scalable approach, which can be performed under atmospheric pressure at low temperatures (<100 C) using a wide variety of substrates; 21 however, it is inapplicable to bare silicon substrates due to high internal stress caused by lattice mismatch between ZnO-NWs and the substrate as well as a large difference in the coe cient of thermal expansion. 21,22 The sputter deposition of a ZnO seed layer on the surface of silicon substrate has been shown to reduce lattice mismatch and alignment the nanowires to improve array density. 17,23 A thin buffer layer on the surface of silicon has also been shown to overcome the effects of lattice mismatch, resulting in a sound electrical and thermal interface between the vertically-aligned ZnO-NWs and the substrate.…”
Section: Introductionmentioning
confidence: 99%