2018
DOI: 10.1016/j.apsusc.2018.01.288
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Hydrothermally grown nano and microstructured V2O5 thin films for electrochromic application

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Cited by 49 publications
(17 citation statements)
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“…As shown in Fig. 3b, the absorption bands at~1633 and at 1003, 945, 830 and 714 cm −1 in the SVO film spectrum are assigned to O-H vibrations of water and to stretching vibrations of V=O 1 , 23,24 , respectively. Figure 3c shows the FTIR spectra of the as-prepared SVO/cellulose paste and the annealed SVO films.…”
Section: Fabrication Of Svo Electrodes Via the Bar-coating Methodsmentioning
confidence: 88%
“…As shown in Fig. 3b, the absorption bands at~1633 and at 1003, 945, 830 and 714 cm −1 in the SVO film spectrum are assigned to O-H vibrations of water and to stretching vibrations of V=O 1 , 23,24 , respectively. Figure 3c shows the FTIR spectra of the as-prepared SVO/cellulose paste and the annealed SVO films.…”
Section: Fabrication Of Svo Electrodes Via the Bar-coating Methodsmentioning
confidence: 88%
“…This recombined emission is from the lowest split-off V 3d band to the O 2p valence band. [48] It is observed that the film annealed at 250 C has higher PL emission intensity. This is because at low temperature the electron-phonon scattering becomes low due to the minimum number of lattice vibration.…”
Section: Optical Propertiesmentioning
confidence: 96%
“…At higher temperature, the grain size is increased which may be due to the fact that the surface diffusion alters the size of the particles to form larger grains. [48] Here, the dramatic changes in structure (from rod to platelet) are notified, which may be due to the fact that the higher annealing temperature assists the disorder movement of the particles. [51]…”
Section: Morphological Propertymentioning
confidence: 96%
“…185 In particular, it is affected by different substrates, 105 oxygen partial pressures, 186 precursor types, 168 precursor concentration, 187 growth times, 188 ambient annealing conditions, 179 and annealing temperatures. 167,188 The E opt of films fabricated by the EBE method increases from 2.18 (840 nm) to 2.36 eV (1200 nm) or from 2.04 (oxygen partial pressure 10 À7 mbar) to 2.30 eV (oxygen partial pressure 10 À4 mbar) while E opt decreases from 2.50 to 2.20 eV with increasing film thickness (fabricated by DC sputtering) from 110 to 450 nm. 109,186,189 E opt also changes due to non-stoichiometry and the influence of the crystallite size.…”
Section: Influence Of the Growth Parametersmentioning
confidence: 99%