Hyers-Ulam stability of (k,s,r)-Tribonacci functional equation in 2-normed space

Kumar, Ashish; Lather, Roji; Kumar, Manoj

doi:10.12988/ams.2015.55402

Cited by 3 publications

(3 citation statements)

References 21 publications

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“…In particular, TiO 2 particles doped into SiC/SiO 2 structures are applied into light-emitting devices, in which TiO 2 particles can promote the formation and growth of SiC microstructure heterojunctions [36]. One-dimensional nano-layered SiC/TiO 2 can also be developed into a temperature sensor [37]. Therefore, the existing researches suggest that TiO 2 can be applied in SiC devices in the forms different from thin films.…”

Section: Discussionmentioning

confidence: 99%

Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition

Zeng

Wang

Zhang

et al. 2023

Semicond. Sci. Technol.

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Silicon carbide (SiC) is regarded as a promising semiconductor owing to its wide band gap and high thermal conductivity. Meanwhile, it possesses issues such as interface properties, which may affect the performance of SiC substrate power devices (e.g., MOSFET), especially when compared with similarly structured silicon appliances. Given that the development of SiC semiconductor devices has a number of commonalities with conventional silicon-based semiconductors, titanium dioxide (TiO2), a material that has a great track record in Si-based semiconductor devices, has been chosen for investigation in this work. Although TiO2 is not capable of being a gate dielectric alone on the SiC substrate because of its relatively narrow band gap, it can be adopted into composite or multilayer gate dielectrics to reach satisfying characteristics. As such, the interfacial state and heterostructure between TiO2 and SiC remain worthy being researched. In the present study, the properties of atomic layer deposited (ALD) TiO2 films on silicon substrates were compared with those on 4H-SiC substrates via X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and X-ray reflectometry (XRR). It is shown that the interface state between ALD TiO2 film and both types of substrates as-deposited have similar chemical conditions, whereby TiO2 layer barely react with substrates, containing great amount of oxygen vacancies. According to band alignment calculations, heterostructure of both samples are type-II heterojunctions with negatively shifted conduction band. Although the large bandwidth of 4H-SiC hinders the use of TiO2 as a gate dielectric in power devices, this structure has the potential for other semiconductor products.

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Section: Discussionmentioning

confidence: 99%

Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition

Zeng

Wang

Zhang

et al. 2023

Semicond. Sci. Technol.

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“…One possibility to produce an unlimited amount of clean and renewable fuel for the future is to produce molecular hydrogen from solar energy, a solution that can be used with close to zero greenhouse gas emissions after the initial production of the solar cell and catalysis materials. Research on hydrogen production pathways focuses on finding economical and sustainable routes 1,2 where utilization of the solar energy is appealing. One of the most mature technologies for this purpose is to produce solar hydrogen using the combined technology of photovoltaic (PV) and electrolysis 3,4 .…”

Section: Introductionmentioning

confidence: 99%

The climatic response of thermally integrated photovoltaic–electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis

Pehlivan

Malm

Neretnieks

et al. 2020

Sustainable Energy Fuels

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“…Hence, the development of a speed estimation method for an FOC IM drive to replace that used for a conventional FOC is required. Several speed estimation methods for FOC IM drives have been established: speed determination by a flux estimator, (2)(3)(4) speed estimation by a model reference adaptive system, (5)(6)(7) a speed adjustment approach using an extended Kalman filter, (8,9) and the use of fuzzy logic or a neural network to determine rotor speed. (10)(11)(12) In this study, the flux observer approach is proposed.…”

Section: Introductionmentioning

confidence: 99%

Speed Estimation of Stator Field Orientation Control Induction Motor Drive Based on the Particle Swarm Optimization Algorithm

2018

Sensors and Materials

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Keywords: speed estimation, flux observer, current sensor, particle swarm optimization (PSO) algorithm, stator field orientation control (SFOC) induction motor (IM) driveIn this study, flux-observer-based speed estimation was used to achieve stator field orientation control (SFOC) of an induction motor (IM) drive utilizing both stator current and stator flux, and the stator current was obtained from an IM by utilizing Hall effect current sensors. The speed estimation scheme was designed in accordance with the Lyapunov stability theory, and the flux observer gain matrix was acquired by the application of a modified particle swarm optimization (PSO) algorithm. The MATLAB/Simulink toolbox was used for simulation, and all the control algorithms were realized using a 32-bit RX62T micro controller to generate pulse width modulation (PWM) signals to the power stage, to drive the motor, and to validate this approach. Both simulation and experimental results confirmed the effectiveness of the proposed system.

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Hyers-Ulam stability of (k,s,r)-Tribonacci functional equation in 2-normed space

Abstract: G be a metric group with metric d (. , .

Cited by 3 publications

References 21 publications

Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition

Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition

The climatic response of thermally integrated photovoltaic–electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis

Speed Estimation of Stator Field Orientation Control Induction Motor Drive Based on the Particle Swarm Optimization Algorithm

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Hyers-Ulam stability of (k,s,r)-Tribonacci functional equation in 2-normed space

Abstract: G be a metric group with metric d (. , .

Cited by 3 publications

References 21 publications

Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition

Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition

The climatic response of thermally integrated photovoltaic–electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis

Speed Estimation of Stator Field Orientation Control Induction Motor Drive Based on the Particle Swarm Optimization Algorithm

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Product

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Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition

Band alignment of TiO₂/SiC and TiO₂/Si heterojunction interface grown by atomic layer deposition