Hyper Suprime-Cam: camera design

Komiyama, Yutaka; Aihara, H.; Fujimori, Hiroki; Furusawa, Hisanori; Kamata, Yukiko; Karoji, Hiroshi; Kawanomoto, Satoshi; Mineo, Sogo; Miyazaki, Satoshi; Morokuma, Tomoki; Nakaya, Hidehiko; Nariai, Kyoji; Obuchi, Yasunari; Okura, Yuki; Tanaka, Yôko; Uchida, Tomohisa; Uraguchi, Fumihiro; Utsumi, Yosuke; Endo, Mamoru; Ezaki, Yutaka; Matsuda, Toru; Miwa, Yoshinori; Yokota, Hideo; Wang, Shiang‐Yu; Liaw, Eric J.-Y.; Chen, Hsin-Yo; Chiu, Chyi-Fong; Jeng, Dun-Zen

doi:10.1117/12.856856

Cited by 19 publications

(12 citation statements)

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“…Fully depleted charge-coupled devices (CCDs) are presently in use in three major astronomical imaging cameras: the PAN-Starrs PS1 camera [1], the HyperSuprime-Cam camera [2], and the Dark Energy Survey Camera (DECam) [3]. The thicknesses of the CCDs are 75 [4], 200 [5] and 250 µm [6], respectively.…”

Section: Introductionmentioning

confidence: 99%

Physics of fully depleted CCDs

Holland

Bebek²,

Kolbe³

et al. 2014

J. Inst.

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In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread function increases slightly with the signal level. This is explained by considering the effect on charge-carrier diffusion due to the reduction in the magnitude of the channel potential as collected signal charge acts to partially neutralize the fixed charge in the depleted channel. The resulting reduced voltage drop across the carrier drift region decreases the vertical electric field and increases the carrier transit time. The second effect is the observation of low-level, concentric ring patterns seen in uniformly illuminated images. This effect is shown to be most likely due to lateral deflection of charge during the transit of the photogenerated carriers to the potential wells as a result of lateral electric fields. The lateral fields are a result of space charge in the fully depleted substrates arising from resistivity variations inherent to the growth of the high-resistivity silicon used to fabricate the CCDs.

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Section: Introductionmentioning

confidence: 99%

Physics of fully depleted CCDs

Holland

Bebek²,

Kolbe³

et al. 2014

J. Inst.

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“…Large format, back-illuminated devices with high quantum efficiency and low noise form the basis for existing and planned large camera systems on astronomical telescopes such as the VLT Survey Telescope OmegaCAM 1 (268 Megapixels), the Dark Energy Survey camera 2, 3 (520 Megapixels), the Subaru HyperSuprime camera 4,5 (872 Megapixels), the University of Hawaii Pan-STARRS camera 6,7 (1.4 Gigapixels), and the camera for the planned Large Synoptic Survey Telescope 8 (LSST, 3.2 Gigapixels).…”

Section: Introductionmentioning

confidence: 99%

Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon

et al. 2012

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We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on highresistivity, 4000-5000 Ω-cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n + polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor has a p + polysilicon gate that connects directly to the p + sense node. Output structures with buried-contact areas as small as 2 µm × 2 µm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e − rms at 70 kpixels/sec.

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“…The thick silicon allows red photons to have a greater chance to be absorbed, increasing quantum efficiency in the red. Because these thick, deep-depletion devices have near-unity quantum efficiency across a very wide spectral range, they have become the design of choice for many modern, large-scale CCD cameras (e.g., Pan-STARRS GPC1, Tonry & Onaka 2009; Subaru Hypersuprime Camera, Komiyama et al 2010;Dark Energy Survey Camera, Flaugher et al 2015).…”

Section: Introductionmentioning

confidence: 99%

Charge Diffusion Variations in Pan-STARRS1 CCDs

Magnier

Tonry

Finkbeiner

et al. 2018

PASP

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. ABSTRACTThick back-illuminated deep-depletion CCDs have superior quantum efficiency over previous generations of thinned and traditional thick CCDs. As a result, they are being used for widefield imaging cameras in several majorxs projects. We use observations from the Pan-STARRS 3π survey to characterize the behavior of the deep-depletion devices used in the Pan-STARRS 1 Gigapixel Camera. We have identified systematic spatial variations in the photometric measurements and stellar profiles which are similar in pattern to the so-called "tree rings" identified in devices used by other wide-field cameras (e.g., DECam and Hypersuprime Camera). The treering features identified in these other cameras result from lateral electric fields which displace the electrons as they are transported in the silicon to the pixel location. In contrast, we show that the photometric and morphological modifications observed in the GPC1 detectors are caused by variations in the vertical charge transportation rate and resulting charge diffusion variations.

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Hyper Suprime-Cam: camera design

Cited by 19 publications

References 0 publications

Physics of fully depleted CCDs

Physics of fully depleted CCDs

Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon

Charge Diffusion Variations in Pan-STARRS1 CCDs

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