Hyperdoped silicon: Processing, properties, and devices

Tong, Zhouyu; Bu, Mingxuan; Zhang, Yiqiang; Yang, Deren; Pi, Xiaodong

doi:10.1088/1674-4926/43/9/093101

Cited by 21 publications

(6 citation statements)

References 146 publications

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“…Several photodetectors have been developed using this approach [10,53,75,78,138], and reviewed in [58,139]. In general, these devices showed EQE higher than 100% for above bandgap light, indicating a photoconductive gain is taking place.…”

Section: Devices With Different Hyperdoping Techniquesmentioning

confidence: 99%

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Sher¹,

García-Hemme²

2023

Semicond. Sci. Technol.

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Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one atomic percent, drastically changes its optoelectronic properties. We review recent progress in the fundamental understanding of the material properties and state of the art sub-bandgap infrared photodetectors. Different hyperdoping techniques are reviewed and compared, namely ion implantation followed by pulsed laser melting or other fast annealing methods and pulsed laser melting of Si with a dopant precursor. We review data available in the literature for material properties related to the success of optoelectronic devices such as the charge carrier lifetime, mobility, and sub-bandgap light absorption of hyperdoped Si with different dopants. To maximize carrier generation and collection efficiency in a sub-bandgap photodetector, charge carrier lifetimes must be long enough to be transported through the hyperdoped layer, which should be on the order of light absorption depth. Lastly, the charge transport properties and photodetector responsivities of hyperdoped Si based photodiodes at room temperature and at cryogenic temperatures are compared. The charge carrier transport mechanisms at different temperature ranges and in different dopant systems are discussed. At room temperature, despite different dopant energetics and hyperdoped thicknesses, light detection exhibits similar spectral responsivities with a common cutoff around 0.5 eV, and at low temperatures, it extends further into the infrared range. The roles of the dopant energetics and process-induced defects are discussed. We highlight future material development directions for enhancing device performance.

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Section: Devices With Different Hyperdoping Techniquesmentioning

confidence: 99%

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Sher¹,

García-Hemme²

2023

Semicond. Sci. Technol.

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“…Over the last decade, there has been a surge in research focused on hyperdoped semiconductors, aiming to surpass the limitations of conventionally doped materials by achieving dopant concentrations well beyond the solubility limits 1 . Nitrogen (N)-hyperdoped silicon (Si) has emerged as a promising material with desirable electronic, spintronic, and photonic properties, offering a wide range of potential applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

Barkby,

Moro,

Perego

et al. 2024

Preprint

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In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceedingsolubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensivelyinvestigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigationshave encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity ofnitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage andamorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping(HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, andreproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at. % (3.01 x 1021 at./cm3) in intrinsicsilicon. Notably, nitrogen concentration remained above the liquid solubility limit to ∼1 μm in depth. HP-GIELD’s high-pressureenvironment effectively suppressed surface damage, while the well-known effects of pulsed laser annealing (PLA) preservedcrystal quality. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governingnitrogen diffusion during HP-GIELD, providing insights into the doping mechanism. Leveraging excimer lasers, our method iswell-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes.

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“…Extending the response wavelength of Si-based photodetectors to the infrared spectral range is the current research interest. Recently, the hyperdoped Si with deep-level impurities prepared by pulsed laser processing has the great application potential in realizing infrared photoresponse beyond 1100 nm wavelengths [8][9][10][11]. Chalcogens (S, Se, and Te) hyperdoped Si has achieved photoresponse in visible and infrared light [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

High infrared responsivity of silicon photodetector with titanium-hyperdoping

Yang

et al. 2023

Semicond. Sci. Technol.

Self Cite

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Silicon (Si) photodetectors have advantages of low cost, convenient preparation, and high integration. However, limited by the indirect bandgap of 1.12 eV, Si photodetectors cannot perform at the wavelength beyond 1100 nm. It is attractive to extend the response wavelength of Si-based photodetectors for the optoelectronics application in recent years. In this article, we have successfully prepared a high-performance photoconductive detector based on titanium-hyperdoped Si (Si:Ti). The Si:Ti material shows an enhanced infrared absorption primarily attributed to the sub-bandgap photo excitation assisted by titanium (Ti)-induced energy states with an average energy level of Ev + 0.23 eV. Moreover, the detector exhibits a high responsivity of 200 mA·W-1 under 1550nm light at 5 V bias, which is higher than previously reported transition metals hyperdoped silicon detectors. These results are helpful for the development of infrared hyperdoped silicon photodetectors in the field of optoelectronics.

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Hyperdoped silicon: Processing, properties, and devices

Cited by 21 publications

References 146 publications

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

High infrared responsivity of silicon photodetector with titanium-hyperdoping

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