Molybdenum-doped indium oxide (IMO)
thin films prepared by aerosol-assisted
chemical vapor deposition (AACVD) show significantly improved charge
carrier mobilities as compared to nominally undoped films prepared
by the same technique. The basis for this very unusual behavior has
been investigated by density functional theory calculations using
a hybrid Hamiltonian, mobility modeling, X-ray photoemission, and
X-ray absorption spectroscopies. In contrast to previous claims that
Mo acts as a three-electron donor, it is shown that substitutional
Mo traps two electrons in localized states falling within the bulk
bandgap and thus Mo is a simple one-electron donor. At the same time,
there is very little hybridization of Mo 4d states with In 5s states
at the bottom of the conduction band. This results in conduction that
is spatially separated to some degree from the donors, giving rise
to significantly reduced ionized impurity scattering, enhancing the
carrier mobility. This is in contrast to Sn-doped In2O3 where the conduction band minimum has significant Sn 5s character,
resulting in regular ionized impurity scattering.