The dynamics of He atoms, which were implanted into copper at 10 K, were observed via their trapping at ni In atoms, using the perturbed yy angular correlation technique. During annealing in the temperature range 10 to 300 K, two types of In-He complexes were detected with the He atom occupying either a trapped single vacancy or an octahedral interstitial lattice site. The formation of the latter He complex shows that He atoms migrate via interstitial sites in Cu already at 25 K.PACS numbers: 66.30.Jt, 61.70.Tm 76.80. + y Whether single He atoms can find stable interstitial positions in metals and what their activation energies would be are still unsettled questions, which have been touched upon mainly theoretically. 1 The lack of experimental information is opposed to an increasing scientific interest in the dynamics of He atoms in metals. 2 The only experimental evidence for a stable interstitial He position and its activation energy comes from field-ion microscopy of W implanted with He of a few hundred electronvolts. 3 In this Letter we present results where the migration of He atoms is detected via the trapping of the He by radioactive impurities (probe atoms) and we show that interstitial He in Cu is mobile at 25 K.Using the perturbed yy angular correlation technique (PAC), the formation of probe-atom-He pairs is detected via the short-range electric field gradient (efg) induced by the He atom at the probe site. 4 Since the efg is characteristic of a particular environment of the probe atom, the presence of intrinsic lattice defects and their mobility can be monitored at the same time. That will be of utmost importance in the case of He atoms introdued by implantation, since vacancies are thereby created whose strong interaction with He atoms influences the behavior of He considerably. From previous PAC experiments the efg's caused by self-interstitials, vacancies, and defect clusters trapped at in In probe atoms in Cu are already well known. 5 Whereas in thermal-desorption experiments (which have provided the most detailed atomistic description for He in metals) the formation of different vacancy-He pairs and their stability is inferred from the observed He release of the sample, 6 in PAC experiments the formation of different probe-atom-He pairs is observed directly and is characterized by different efg's.In order to study the mobility of He atoms at low temperatures, polycrystalline foils and single crystals of Cu were doped with probe atoms by implanting in In atoms of 350 keV at 295 K. Afterwards, the samples were annealed at 800 K to remove the damage created by the implantation and were doped with 4 He atoms of 30 keV at 10 K. For the detection of the efg caused by the arrival of He atoms or intrinsic defects at the probe site, the 173-245-keV y cascade was mea-sured in coincidence; the y rays are emitted during the decay of the probe atom m In (r 1/2 = 2.8 d) into its daughter ni Cd. The efg acting on the probe atom manifests itself by modulating the coincidence probability in time, where the time r...