Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity

Butler, Sween; Jiang, Hongxing; Jun, Lin; Neogi, Arup

doi:10.1002/adom.201600804

Cited by 8 publications

(4 citation statements)

References 42 publications

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“…Next, we analyzed the excited modes in GaN MW resonators to match the observed intensity patterns to the corresponding FPMs and WGMs. The confinement of FPMs and WGMs was earlier demonstrated in various GaN nanostructures with hexagonal cross-section: nanowires, nanorods, nanopyramids, etc [13,14,17,40]. Figure 3(d FP and d m WG for mth FPM and WGM, respectively.…”

Section: Microwires Synthesis and Morphology Studiesmentioning

confidence: 78%

Mapping of Fabry–Perot and whispering gallery modes in GaN microwires by nonlinear imaging

Berdnikov¹,

Shtrom²,

Rozhavskaya³

et al. 2021

Nanotechnology

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Engineering nonlinear optical responses at the microscale is a key topic in photonics for achieving efficient frequency conversion and light manipulation. Gallium nitride (GaN) is a promising semiconductor material for integrated nonlinear photonic structures. In this work, we use epitaxially grown GaN microwires as nonlinear optical whispering gallery and Fabry-Perot resonators. We demonstrate an effective generation of second-harmonic and polarizationdependent signals of whispering gallery and Fabry-Perot modes under near-infrared excitation. We show how the rotation of the excitation polarization can be used to control and switch between Fabry-Perot and whispering gallery modes in tapered GaN microwire resonators. We demonstrate the enhancement of two-photon luminescence in the yellow-green spectral range due to efficient coupling between whispering gallery, Fabry-Perot modes, and excitonic states in GaN. This luminescence enhancement allows us to conveniently visualize whispering gallery modes excited with a near-infrared source. Such microwire resonators can be used as compact microlasers or sensing elements in photonic sensors.

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Section: Microwires Synthesis and Morphology Studiesmentioning

confidence: 78%

Mapping of Fabry–Perot and whispering gallery modes in GaN microwires by nonlinear imaging

Berdnikov¹,

Shtrom²,

Rozhavskaya³

et al. 2021

Nanotechnology

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“…At present, we use numerical modelling along with plausible assumptions to partially examine these observations in the next section. However, it is worthwhile to note that nonlinear optical interactions have been previously exploited and optimized in case of single hexagonal GaN micropyramid to realize microphotonic white light sources & coherent tunable UV–VIS sources using spatially controlled excitation without any change in the material properties 10 . The spatially controlled excitation in that work is however different from our case.…”

Section: Resultsmentioning

confidence: 99%

Observation of monochromatic and coherent luminescence from nanocavities of GaN nanowall network

Shamoon

Upadhyaya

Shivaprasad

2021

Sci Rep

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Scaling-down the size of semiconductor cavity lasers and engineering their electromagnetic environment in the Purcell regime can bring about spectacular advance in nanodevices fabrication. We report here an unprecedented observation of a coherent Cathodoluminescence from GaN nanocavities (20–100 nm). Incident lower energy (< 15 kV) electron beams excite the band edge UV emission from the walls of the network whereas for higher energies, the emitted photons are spontaneously down converted into NIR and preferentially emerge from the nanocavities. Non-centrosymmetric structure of GaN and its nanowall geometry together facilitate this unique observation which is substantiated by our numerical results. At cryogenic temperatures, an intense and narrow laser-like NIR beam emanates out of the nanocavities. The work promises the possibility of fabrication of very high density (over 108/cm2) cavity lasers that are addressable by simple deflection and tuning of incident electron beams.

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“…GaN microcavities denote the optical dimensional confined GaN micro structures exhibiting singular performances or producing exotic effects, such as low‐threshold lasing, enhanced nonlinear conversion, and directional luminescence. During the past few years, numerous geometries of GaN‐based micro cavities have been investigated, including 1D photonic crystal cavities, [ 101–104 ] nanowire cavities, [ 105–109 ] nanowire waveguides, [ 110–114 ] micro disks, [ 6,115–144 ] etc. These cavities support single mode or multiple modes to realize strong light–matter coupling.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity

Cited by 8 publications

References 42 publications

Mapping of Fabry–Perot and whispering gallery modes in GaN microwires by nonlinear imaging

Mapping of Fabry–Perot and whispering gallery modes in GaN microwires by nonlinear imaging

Observation of monochromatic and coherent luminescence from nanocavities of GaN nanowall network

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

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