1999
DOI: 10.1016/s0039-6028(99)00771-2
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Hyperthermal atomic oxygen beam-induced etching of HOPG (0001) studied by X-ray photoelectron spectroscopy and scanning tunneling microscopy

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Cited by 61 publications
(70 citation statements)
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“…Postexposure characterization of room-temperature HOPG subjected to hyperthermal O and O 2 bombardment revealed that C−O, CO, or O−C−O and O−CO functional groups populated the surface. 24 In the same study, scanning tunneling microscopy studies showed that the surface became rough and formed hillock-like structures. Nicholson, Minton, and Sibener conducted a series of experiments that studied the chemical reactivity of HOPG in the range of 300− 500 K when exposed to higher fluences of hyperthermal O atoms.…”
Section: Introductionmentioning
confidence: 86%
“…Postexposure characterization of room-temperature HOPG subjected to hyperthermal O and O 2 bombardment revealed that C−O, CO, or O−C−O and O−CO functional groups populated the surface. 24 In the same study, scanning tunneling microscopy studies showed that the surface became rough and formed hillock-like structures. Nicholson, Minton, and Sibener conducted a series of experiments that studied the chemical reactivity of HOPG in the range of 300− 500 K when exposed to higher fluences of hyperthermal O atoms.…”
Section: Introductionmentioning
confidence: 86%
“…Fig. 2 (b) shows O/C atomic ratios of the When a flat graphite surface is fully covered (one monolayer) with adsorbed oxygen, O/C ratio of the surface is estimated to be approximately 55 % [9]. This value is almost two times higher than that of the superhydrophilic HOPG surface.…”
Section: Introductionmentioning
confidence: 94%
“…Previously the basal plane of highly oriented pyrolytic graphite (HOPG) surface was exposed to a hyperthermal oxygen-atom beam and the direct oxidation on defect-free graphite basal planes was observed [9]. It is possible that the effect of basal plane oxidation to improve hydrophilicity on nano-rough carbon surfaces is investigated by hyperthermal O-atom beam exposure.…”
Section: Introductionmentioning
confidence: 99%
“…After the He/H 2 plasma pretreatment, the binding energy observed at 284.1 eV corresponds to that of HOPG which is composed of sp 2 bonding. [40][41] These were confirmed as amorphous sp 2 carbon films from the Raman spectrum.…”
Section: -Toward a High Throughput Process-mentioning
confidence: 99%
“…After the He/H 2 plasma pretreatment, the binding energy observed at 284.1 eV corresponds to that of HOPG which is composed of sp 2 bonding. [40][41] These were confirmed as amorphous sp 2 carbon films from the Raman spectrum.The difference between the effect of He/H 2 and Ar/H 2 plasma pretreatment methods can be attributed to the difference between the sputtering yields of SiO 2 for helium and argon.In the case of surface-wave plasma CVD, high-density plasma is excited in the vicinity of the quartz window, and the mixing of silicon and oxygen with the plasma by the sputtering of the quartz window is a major issue. That is, it is necessary to suppress the deposition of such impurities onto the substrate.…”
mentioning
confidence: 99%