2012
DOI: 10.1103/physrevb.85.104404
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Hysteresis and remanence in magnetoelectric effects in functionally graded magnetostrictive-piezoelectric layered composites

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Cited by 65 publications
(32 citation statements)
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“…In fact, as suggested by Srinivasan [70], this material exhibits large anisotropy, which limits domain rotation and hence dynamic deformation, while this material exhibits very high saturation magnetostriction (λ S > 300 ppm) [71]. This anisotropy could explain why the magnetoelectric effect is much higher for materials with high permeability and low magnetostriction saturation (λ S ) such as nickel ferrite (NFO), nickel zinc ferrite (NZFO), and manganese zinc ferrite (MZFO) than for materials with low permeability and high λ S such as cobalt ferrite [72][73][74][75][76]. Yet the strain derivative q dc is higher for CFO than for NFO and MZFO, showing that this parameter may not fully and accurately characterize the ME effect.…”
Section: Introductionmentioning
confidence: 99%
“…In fact, as suggested by Srinivasan [70], this material exhibits large anisotropy, which limits domain rotation and hence dynamic deformation, while this material exhibits very high saturation magnetostriction (λ S > 300 ppm) [71]. This anisotropy could explain why the magnetoelectric effect is much higher for materials with high permeability and low magnetostriction saturation (λ S ) such as nickel ferrite (NFO), nickel zinc ferrite (NZFO), and manganese zinc ferrite (MZFO) than for materials with low permeability and high λ S such as cobalt ferrite [72][73][74][75][76]. Yet the strain derivative q dc is higher for CFO than for NFO and MZFO, showing that this parameter may not fully and accurately characterize the ME effect.…”
Section: Introductionmentioning
confidence: 99%
“…5,12,13 The focus of prior studies on bulk structure has been mainly on understanding the nature of self-bias effect in terms of grading of ferromagnetic composition and bending resonance. 7,9,14 However, these structure present another level of practical difficulty for on-chip components as synthesis process has to account for heterogonous graded structure or two-phase magnetic layers along with flexural deformation. Furthermore, the self-biased effect due to the grading induced build-in field lacks the feasibility for controllable tunability.…”
mentioning
confidence: 99%
“…[4][5][6][7][8][9] Alternative approaches have been suggested for the case of thin films that rely on magnetic fielddependence of resonant frequency and angular dependence of exchange bias field. 10,11 This phenomenon is promising for applications such as magnetic field sensor, core-free magnetic flux control device, and electrically controlled magnetic memory devices.…”
mentioning
confidence: 99%
“…Compared to the ME coefficient of 30 mV cm À1 Oe À1 obtained for NKNLS-NZF/Ni/NKNLS-NZF trilayer laminate (40Â), $100 mV cm À1 Oe À1 obtained for Ni-PZN-PZT bilayer laminate (12Â), and $400 mV cm À1 Oe À1 obtained for functionally graded Ni-NZFO-PZT laminate composites (3Â) at zero-bias, our co-fired composite exhibited extremely high response. [24][25][26] Recently, slightly larger zero-bias magnetoelectric coefficient of 1.65 V cm À1 Oe À1 in a quasi-one dimensional ME sensor has been reported at 100 Hz compared to our case (1.47 V cm À1 Oe…”
mentioning
confidence: 99%