Hysteresis from antiferromagnet domain-wall processes in exchange biased systems

Kim, Joo-Von; Stamps, R. L.

doi:10.1016/j.jmmm.2004.09.070

Cited by 1 publication

(2 citation statements)

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“…Wall pinning and depinning mechanisms have been considered to be the origin of the temperature dependences of H ex and H c [6] although the resulting temperature dependences were different. Such mechanisms are affected by the inclusion of magnetic impurities within the AF, giving rise under certain conditions to H c enhancement and asymmetric hysteresis loops [7]. These conditions are the reduction of the AF wall energy due to the presence of defects that do not produce irreversible behaviour, which would be dominant at a low concentration of defects.…”

Section: Introductionmentioning

confidence: 99%

“…All these theoretical descriptions have in common the fact that they are unable to account a priori for the behaviour of real materials without the inclusion of fitting parameters such as interfacial exchange stiffness constants [2][3][4][5][6][7][8][9]. There are two reasons why the discrepancy between theory and experiment occurs other than the inherent complexity of a system where a spin compensated layer is adjacent to a spin uncompensated layer.…”

Section: Introductionmentioning

confidence: 99%

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Bulk and interfacial effects in exchange bias systems

Dutson¹,

Huerrich²,

Vallejo-Fernández³

et al. 2007

J. Phys. D: Appl. Phys.

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In this work we report on an extensive and detailed study of exchange bias systems consisting of two ferromagnetic layers deposited with an antiferromagnetic layer of IrMn between them. Systems with two different ferromagnetic layers have been studied in which sample 1 had CoFe layers of different thicknesses and sample 2 had not only ferromagnetic layers of different thicknesses but also the composition of the upper ferromagnetic layers was changed from CoFe to NiFe. In both the samples the antiferromagnetic layer thickness was maintained constant at 5 nm, NiCr seed and capping layers (5 nm) were used on all samples. Such a system is of considerable interest as the properties of each ferromagnetic layer are affected by the same antiferromagnet. However differences in behaviour will occur due to the nature of the interfaces between the different layers as well as other parameters such as the ferromagnetic layer thickness. We have conducted a study of thermal activation effects in these systems where both or a single ferromagnetic layer can be reversed whilst the system is heated. We find that we can differentiate between bulk and interface effects indicating that the role of spin disorder at the interface is crucial in determining the final value of the exchange bias.

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Section: Introductionmentioning

confidence: 99%