2009
DOI: 10.1088/0953-2048/22/6/064005
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Hysteretic behaviour of nanoSQUIDs—prospective application as trapped-vortex memory

Abstract: We have studied the critical current–magnetic field dependence, Ic(B), of nanoSQUIDs. The vortex penetration field of a Nb/Au bilayer film was determined from the hysteretic behaviour of the nanoSQUID’s Ic(B) pattern. The current–voltage characteristics of Nb/Au bilayer microbridges were also studied. The vortex penetration field was found to be much lower than the Nb single-layer counterpart. These properties suggest that a nanoSQUID may be a potential trapped-vortex memory device, which is discussed.

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Cited by 6 publications
(2 citation statements)
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“…In fact, to avoid the entry of vortices or their activated thermally motion, careful designs of the device has to be take into consideration. However, single vortex at localized trapping site can be used as a memory bit as proposed in the late '70s [280]. In the early '80s, Uehara and Nagata [281] investigated a memory cell based on multiple trapped vortices in superconducting thin film.…”
Section: Nanoelectronics and Quantum Computingmentioning
confidence: 99%
“…In fact, to avoid the entry of vortices or their activated thermally motion, careful designs of the device has to be take into consideration. However, single vortex at localized trapping site can be used as a memory bit as proposed in the late '70s [280]. In the early '80s, Uehara and Nagata [281] investigated a memory cell based on multiple trapped vortices in superconducting thin film.…”
Section: Nanoelectronics and Quantum Computingmentioning
confidence: 99%
“…The gate tunability of the CNT junctions enhances the sensitivity of the device which can in principle detect the spin of a single molecule. In this issue, Lam [32] also discusses the use of a nanoSQUID as a memory device.…”
Section: Nanoelectronics Including Memorymentioning
confidence: 99%