<i>Ab Initio</i> evaluation of electron transport properties of Pt, Rh, Ir, and Pd nanowires for advanced interconnect applications

Lanzillo, Nicholas A.

doi:10.1063/1.4983072

Cited by 52 publications

(46 citation statements)

References 36 publications

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“…Table II summarizes the computed specific resistivity and reflection coefficient for grain boundaries Σ3, Σ5, Σ9, and Σ11. Like many other fcc metals, we see that for both Ru and Cu, the reflection coefficients follow the trend that r Σ3 r Σ11 < r Σ5 ≈ r Σ9 , which can be understood by examining the symmetry and void structure of the interface of each grain boundary [22]. Notably, for each grain boundary studied here, the reflection coefficient for Ru is much larger than that for Cu indicating that grain boundary scattering plays a much larger role in the resistance of fcc Ru lines.…”

Section: Grain Boundary Scatteringsupporting

confidence: 58%

“…The conductance of the structure is proportional to the cross-sectional area of the device, so we report the areanormalized specific resistivity γ = A/G as is standard practice in the literature [18,20,22,23,31,32].…”

Section: Device Simulationsmentioning

confidence: 99%

“…Figure 2(a) shows the calculated resistivity of fcc Ru against that of Cu, hcp Ru, Co, and W over a wide range of grain sizes. The values for bulk resistivity and mean free path of Cu, hcp Ru, Co, and W are taken from [8], and the shaded regions for each metal indicate the range of reflection coefficients calculated here for Ru and from previous studies for the Cu, Co, and W [22][23][24]. For large grain sizes where grain boundary scattering is negligible compared to inelastic phonon scattering, we see that the expected resistivity is strongly clustered around the values of bulk conductivity for each metal.…”

Section: Grain Boundary Scatteringmentioning

confidence: 99%

“…As interconnect widths shrink to the tens of nanometers and below, it is increasingly important to understand this less common phase. Studying the properties of fcc Ru can additionally provide valuable insight and direct comparison to other notable cubic BEOL conductors such as Cu, Co, and W [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

“…(a) Resitivity of Cu, fcc Ru, hcp Ru, Co, and W as a function of average grain boundary using the Mayadas-Shatzkes model. For each metal, the shaded region covers the range of reflection coefficients computed in this work and previous studies[22][23][24]. (b) Expected line resistance due to grain boundary scattering.…”

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confidence: 99%

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First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects

Philip¹,

Lanzillo²,

Gunst

et al. 2020

Phys. Rev. Applied

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As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention has been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensively studied, but relatively little attention has been paid to the face-centered cubic (fcc) phase, which has been shown to nucleate in confined structures and may be present in tight-pitch interconnects. Using ab initio techniques, we benchmark the performance of fcc Ru. We find that the phonon-limited bulk resistivity of the fcc Ru is less than half of that of hcp Ru, a feature we trace back to the stronger electron-phonon coupling elements in hcp Ru that are geometrically inherited from the modified Fermi surface shape of the fcc crystal. Despite this benefit of the fcc phase, high grain boundary scattering results in increased resistivity compared to Cu-based interconnects with similar average grain size. We find, however, that the line resistance of fcc Ru is lower than that of Cu below 21 nm line width due to the conductor volume lost to adhesion and wetting liners. In addition to studying bulk transport properties, we evaluate the performance of adhesion liners for fcc Ru. We find that it is energetically more favorable for fcc Ru to bind directly to silicon dioxide than through conventional adhesion liners such as TaN and TiN. In the case that a thin liner is necessary for the Ru deposition technique, we find that the vertical resistance penalty of a liner for fcc Ru can be up to eight times lower than that calculated for conventional liners used for Cu interconnects. Our calculations, therefore, suggest that the formation of the fcc phase of Ru may be a beneficial for advanced, low-resistance interconnects. arXiv:2001.02216v3 [cond-mat.mtrl-sci] a) fcc b) hcp

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Section: Grain Boundary Scatteringsupporting

confidence: 58%

Section: Device Simulationsmentioning

confidence: 99%

Section: Grain Boundary Scatteringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects

Philip¹,

Lanzillo²,

Gunst

et al. 2020

Phys. Rev. Applied

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Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

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Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

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Programmable Analog Circuits with Neuromorphic Nanostructured Platinum Films

Radice,

Profumo,

Borghi

et al. 2024

Adv Elect Materials

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Self‐assembled nanoparticle or nanowire networks have recently come under the spotlight as systems able to emulate brain‐like data processing performances by exploiting the memristive character and the wiring of the junctions connecting the nanostructured network building blocks. Recently it is demonstrated that nanostructured Au films, fabricated by the assembling of gold clusters produced in the gas phase, have non‐linear and non‐local electric conduction properties caused by the extremely high density of grain boundaries and the resulting complex arrangement of nanojunctions. These observations suggest that nanostructured metallic films can be explored and exploited as a novel class of neuromorphic systems for unconventional electronic devices. Here it is reported that nanostructured cluster‐assembled Pt films show resistive switching activity, negative differential resistance, and reversible memory effects. These properties allow the use of nanostructured Pt films in programmable analog circuits, such as gain amplifiers and relaxation oscillators with fast response.

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Ab Initio evaluation of electron transport properties of Pt, Rh, Ir, and Pd nanowires for advanced interconnect applications

Cited by 52 publications

References 36 publications

First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects

First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Programmable Analog Circuits with Neuromorphic Nanostructured Platinum Films

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