2005
DOI: 10.1103/physrevb.72.161202
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Ab initiomolecular dynamics calculations of threshold displacement energies in silicon carbide

Abstract: Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary to previous studies using classical molecular dynamics, we found values close to the experimental consensus, and also created defects in good agreement with recent works on interstitials stability in silicon carbide. We carefully investigated the limits of this approach. Our work shows that it is possible to calculate displacement en… Show more

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Cited by 106 publications
(71 citation statements)
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“…While variable-charge potentials are of interest to simulate complex bonding and chemistry, particularly at interfaces, none have yet been developed or tested for the complex dynamics occurring during ion-solid interactions. In recent years, ab initio MD methods (AIMD), which offer a path that mixes the advantages of both MD and ab initio methods, have been employed to study low energy recoil events in SiC, GaN, fluorite-structured oxides and pyrochlores [17][18][19][20][21]. In this method, the forces acting on the atomic nuclei are all computed on-the-fly based on electronic structure calculations.…”
Section: Introductionmentioning
confidence: 99%
“…While variable-charge potentials are of interest to simulate complex bonding and chemistry, particularly at interfaces, none have yet been developed or tested for the complex dynamics occurring during ion-solid interactions. In recent years, ab initio MD methods (AIMD), which offer a path that mixes the advantages of both MD and ab initio methods, have been employed to study low energy recoil events in SiC, GaN, fluorite-structured oxides and pyrochlores [17][18][19][20][21]. In this method, the forces acting on the atomic nuclei are all computed on-the-fly based on electronic structure calculations.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, (001)-oriented 3C-SiC single crystals were irradiated with 100 keV Fe + ions at room temperature in the 4x10 13 -4x10 14 cm -2 fluence range [6], which corresponds to damage doses of 0.07 to 0.7 displacements per atom (dpa) at the damage peak, as determined with SRIM calculations [19] using the recommended threshold displacement energies of 20 eV and 35 eV for the C and Si sublattices, respectively [20][21]. The weighted average recoil spectra [22] were calculated from the SRIM data.…”
Section: Ii1 Experimentsmentioning
confidence: 99%
“…This was recently done in covalent materials SiC [343] and Si, [344] and good agreement was obtained between the experimental data available and the calculated ones.…”
Section: Status/role Of Ab-initio Calculations In the Multiscale mentioning
confidence: 68%