2008
DOI: 10.1103/physrevb.78.241201
|View full text |Cite
|
Sign up to set email alerts
|

Ab initiostudy of the electronic states induced by oxygen vacancies in rutile and anataseTiO2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

6
110
0
1

Year Published

2010
2010
2023
2023

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 252 publications
(117 citation statements)
references
References 21 publications
6
110
0
1
Order By: Relevance
“…Although these large U values give band gaps close to experiment [73], they are somewhat larger than those calculated in Ref. [84] or used, e.g., in defect calculations [85]. given with respect to the rutile phase.…”
Section: Relative Stability Of Rutile and Anatase Phasesmentioning
confidence: 72%
“…Although these large U values give band gaps close to experiment [73], they are somewhat larger than those calculated in Ref. [84] or used, e.g., in defect calculations [85]. given with respect to the rutile phase.…”
Section: Relative Stability Of Rutile and Anatase Phasesmentioning
confidence: 72%
“…The formation of a neutral oxygen vacancy results in two excess electrons in the system, giving rise to the formation of two Ti(III) ions. Although the optimal positions of the Ti(III) ions relative to the oxygen vacancy have been studied in some detail before, 34,[55][56][57] to fully assess the ability of the occupation matrix approach a full assessment of the cell was conducted. Initial tests indicated that the differences in energy between ferromagnetic and antiferromagnetic configurations of the two Ti(III) ions was insignificant, therefore only ferromagnetic couplings were trialled.…”
Section: Timentioning
confidence: 99%
“…The optoelectronic properties of O-deficient TiO 2 (TiO 2−x ) have been extensively investigated both experimentally 47 and theoretically, 15,[48][49][50][51][52][53] making this system an ideal model for testing the performance of the dielectric-dependent hybrid method in describing the electronic properties of defective semiconductors.…”
Section: A Tiomentioning
confidence: 99%