<i>c</i>-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

Palkar, V. R.; Purandare, S. C.; Pai, S. P.; Chattopadhyay, Soma; Apte, P. R.; Pinto, R.; Multani, M.S.

doi:10.1063/1.116687

Cited by 30 publications

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“…In all the cases, the structure relaxations around V Ti are greater than the others, and the one around V Pb are least. This could account for the experiment result that the crystal structure, lattice parameter were still maintained with the decreasing of Pb/Ti ratio when the V Pb concentration was relatively low[18]. FromTable 1, it could be also found that in the case of V O , the bond length between Ti ion and uppermost O ion becomes shorter (1.8 Å), indicating a stronger hybridization between Ti-O.…”

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confidence: 60%

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The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation

Cao

et al. 2010

Ferroelectrics

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The first-principles calculation had been adopted to investigate the intrinsic vacancies in bulk PbTiO 3 . The atomic relaxation and the formation energy of isolated neutral vacancy were studied respectively. And the defect reaction energies of Pb partial), were obtained. It was found that both the formation energy of vacancy and the defect reaction energy were connected closely with the thermodynamic condition. By comparing the calculated formation energy values, Pb partial Schottky) was considered to be the dominant defect species in the seven thermodynamic conditions, consistent with the experimental reports.

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confidence: 60%

“…1. V Pb 2− + V O 2+ is also the main defect reported on experiments [18,21]. In the cases of SrTiO 3 and BaTiO 3 , the dominant defect species is V O or V Sr (Ba) 2− + V O 2+ , depending on the thermodynamic condition [11,12].…”

Section: Defect Formation Energymentioning

confidence: 95%

The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation

Cao

et al. 2010

Ferroelectrics

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“…1,2 A particularly large volume of research has been devoted to ferroelectrics with the perovskite structure, such as BaTiO 3 , PbTiO 3 , (Pb,La͒TiO 3 , Pb͑Zr,Ti͒O 3 , (Pb,La͒͑Zr,Ti͒O 3 , (Ba,Sr͒TiO 3 , etc. [3][4][5][6][7][8][9] In the last few years, there have also been a few reports on thin films of antiferroelectric materials such as PbZrO 3 , 10-13 which have potential applications in phase switching, charge storage, current sources, and linear capacitors. They can also be used in microelectronic or microelectromechanical devices.…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation

Chattopadhyay

Ayyub

Palkar

et al. 1998

Journal of Applied Physics

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“…The densely compacted target helped to minimize particulate growth commonly occurring during ablation process and thus improved the film quality. The pulsed laser deposition process used for growing thin films has been described earlier [10]. Deposition conditions such as substrate temperature, substrate to target distance, laser energy and oxygen pressure were optimized so as to achieve single phase, highly insulating thin films (resistivity of the order of 10 8 -10 9 .cm), similar to that of target material.…”

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Scanning probe imaging of coexistent ferromagnetism and ferroelectricity at room temperature

Palkar

Purandare

Gohil

et al. 2007

Applied Physics Letters

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Room temperature coexistence of ferromagnetism and ferroelectricity in a thin film of a novel material of nominal composition PbTi 0.5 Fe 0.5 O 3 - is probed by standard ferroelectric and ferromagnetic hysteresis loop measurements and by scanning probe microscopy of various kinds.Both magnetic domains and ferroelectric domains are observed in the same spatial region of the material, implying phase coexistence in this system. For both order parameters, sample morphology strongly affects roughness of the domain walls. PACS: 75.80.+q, 85.40, 68.64.Dz ________________________________________________________________ Recent resurgence of interest in multiferroic systems in general, and in magnetoelectric systems in particular, is driven by two different reasons, namely, the basic physics of coexistence of two order parameters in the ground state and the possibility of using this coexistence, and a possible coupling between them, for devising novel applications [1][2]. Magnetoelectric systems, which exhibit coexistence of magnetism and ferroelectricity with a possible coupling between the two order parameters, are of particular importance, especially when the magnetism is of the ferromagnetic variety. Multifunctional and exotic non-volatile memory applications are possible in that case. However, the presence of local spins and of off-centered structural distortion are basic requirements for magnetic and ferroelectric properties, respectively and naturally, these two seemingly unrelated phenomena rarely co-exist at room temperature. Unfortunately, most of the known multiferroic systems are antiferromegnetic with transition temperatures below room temperature [3,4]. Therefore, for device applications these materials hardly find any use.Recently, we have reported novel materials exhibiting magnetoelectric properties at room temperature [5][6][7]. In this letter we report room temperature multiferroic properties for lower compared to any of these phases. It is essential to reproduce these properties in thin films for their usefulness in practical applications, as well as for further basic physics investigations. In this letter we report that thin films of this material, grown on Pt/TiO 2 /SiO 2 /Si substrate by using Pulsed Laser Deposition (PLD) technique, preserve the room temperature multiferroic nature of this system. More importantly we are successful in demonstrating the phase coexistence occurring at microscopic scale as well.In order to achieve good chemical homogeneity and controlled stoichiometry, Pb(Ti 0.5 Fe 0.5 )O 3- powder sample was prepared by using wet chemical route (co-precipitation).The detailed procedure for synthesis is described elsewhere [7]. From Nominal composition (with Fe +3 replacing Ti +4 ) one would expect the system to be an electrical conductor. Instead, we have been able to synthesize samples, which are insulating. Powder samples thus prepared were compacted and sintered at 1000 C/2hr. to obtain dense target for the laser ablation process.Sintering was carried out in PbO atmosph...

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c-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

Cited by 30 publications

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The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation

The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation

Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation

Scanning probe imaging of coexistent ferromagnetism and ferroelectricity at room temperature

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c-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

Cited by 30 publications

References 0 publications

The Structure and Defect Formation Energy in Tetragonal PbTiO3:AbInitio Calculation

The Structure and Defect Formation Energy in Tetragonal PbTiO3:AbInitio Calculation

Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation

Scanning probe imaging of coexistent ferromagnetism and ferroelectricity at room temperature

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Product

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The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation

The Structure and Defect Formation Energy in Tetragonal PbTiO₃:AbInitio Calculation