1966
DOI: 10.1063/1.3048225
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Fundamentals of Semiconductor Devices

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Cited by 65 publications
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“…This result has been emphasized in the field of semiconductor devices. 7,9,18 If R k . R W , the dc resistance is approximately R dc ) R W , while it is given by eq 74 if R W .…”
Section: Absorbing Boundary Conditionmentioning
confidence: 99%
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“…This result has been emphasized in the field of semiconductor devices. 7,9,18 If R k . R W , the dc resistance is approximately R dc ) R W , while it is given by eq 74 if R W .…”
Section: Absorbing Boundary Conditionmentioning
confidence: 99%
“…Here, we adopt this scheme, which covers the following instances, among others: the diffusion of an ionic species coupled with a homogeneous reaction in electrochemical systems, the transport and recombination of a minority electronic species in solid-state semiconductor devices such as the p-n junction diode, 7 and the electron transport and recombination in nanostructured semiconductor electrodes. In these last two areas, eq 5 would be usually written in terms of the electron lifetime,…”
Section: Z(iω)mentioning
confidence: 99%
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“…Our results shows that an addition capacitance is connected on parallel with depletion capacitance to form junction capacitance under high negative bias conditions. This addition is known as a diffusion or chemical capacitance (C diff ) (Sero et al, 2009;Tsai et al, 2006;Lindmayer and Wringle, 1966) and comes from an accumulation of non recombine excess holes in n-type layer (nc-TiO 2 thin film) and non recombine excess electrons in P-Type (P3HT). According to Equation 2 (Sero et al, 2009;Lindmayer and Wringle, 1966):…”
Section: Discussionmentioning
confidence: 99%