I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Abstract

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I− III−VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I−III−VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I−III−VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

Highly efficient narrowed emitting AgInxGa1−xS2/AgGaS2 quantum dots via an HF-assisted one-pot synthesis strategy and their light-emitting diodes

“…Quantum dot light-emitting diodes (QLEDs) based on colloidal quantum dots (QDs) have garnered extensive attention in research due to their distinctive features, which encompass spontaneous emission, tunable emission spectra, pure emission colors, and ease of manufacturing. [1][2][3] These features position them as crucial components for the next generation of displays. 4 Since the initial demonstration of QLEDs, there has been noteworthy progress in the performance of QD materials and device structures.…”

Recent advances in photoelectrochemical hydrogen production using I–III–VI quantum dots

“…Previous reviews have broadly covered general QD-based photoanodes, 16–19 PEC devices with various sensitizer materials, 14,15 or the synthesis and properties of I–III–VI QDs. 46–49 For instance, Yang et al have focused on light-emitting diodes, 65 while Shishodia et al have concentrated on photovoltaic cells using I–III–VI QDs. 66 However, comprehensive reviews and summaries of recent progress in I–III–VI QDs specifically for PEC applications have been rarely reported.…”

Eco-Friendly Zn–Ag–In–Ga–S Quantum Dots: Amorphous Indium Sulfide Passivated Silver/Sulfur Vacancies Achieving Efficient Red Light-Emitting Diodes

“…Recently, eco-friendly I–III–VI QDs and derivatives (I: Ag + , Cu + ; III: Ga 3+ , In 3+ , Al 3+ ; VI: S 2– , Se 2– , and Te 2– ) have emerged as an excellent alternative for Cd- and Pb-based QDs. The characteristics of direct band-gap semiconductors, band structure tunability, and excited-state energy convergence endow I–III–VI QDs with the potential to realize full visible coverage, pure color, and high PLQY. − However, the multitype vacancies, highlighted as V Ag and V S in typical Ag–In/Ga–S QDs, could be nonradiative centers to quench active excitons (Figure a). The resulting inhomogeneous carrier distribution severely limits the improvement of color purity and efficiency in materials and devices.…”