I-III-VI/sub 2/ multinary solar cells based on CuInSe/sub 2/

Tarrant, D.; Ermer, J.

doi:10.1109/pvsc.1993.347153

Cited by 24 publications

(26 citation statements)

References 2 publications

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“…It has also been shown that the addition of elements such as Ga and sulfUr may fbrther extend the compositional range over which good PV performance results. [22,29] We have demonstrated deposition processes which evidence a very wide process window in terms of composition. For example, small area devices having a Cu/(In+Ga) ratio of 0.90 and 0.75 showed AM13 efficiencies of 10.8% and 11.5% respectively.…”

Section: Robustness and Process Tolerance Of Variabilitymentioning

confidence: 98%

“…This problem was attacked and greatly reduced through modifkitions to the scribing processes and the associated contacting layers. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribinglmodule formation operations to Cross-section scanning electron micrographs of CIGS films deposited using various methods Compositional uniformity of absorber layer over a 9" x 9" area Uniformity of device performance over a 3" substrate Uniformity of average device performance over eight 3"x3" substrates Frequency histogram of device performance on eight 3"x3" substrates Absorber layer composition for six consecutive depositions Device J-V parameters for six consecutive absorber layer depositions Measurement of J-V characteristic of a module segment either through a top grid or an interconnect A scanning electron micrograph and schematic view of step coverage of ZnO at an interconnect An optical micrograph of a defective substrate scribe An optical micrograph of a high quality substrate scribe 29 The light J-V characteristic ofthe highest efficiency small area cell 32 The dark J-V characteristic of the highest efficiency small area cell 33 A schematic representation of the circuit used for module analysis 35 Calculated and measured J-V data for a module segment using 36 various segment widths, fiont contact and interconnect resistivities The calculated module efficiency using 18 or 12 mil interconnects 37 The calculated module efficiency uSig 6 or 0 mil interconnects 38…”

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confidence: 99%

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Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

Arya¹,

Fogleboch²,

Keßler³

et al. 1996

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Ken Zweibel for helpfhl suggestions and coordination of efforts on our behalf. Executive SummaryRecent progress in photovoltaics has been particularly notable in several materials systems, especially in copper'indium diselenide (CIS). Small area cells using this material have recently exhibited conversion efficiency in the range of 17% [1,2]. This material system exhibits a number of important advantages. It has a very high optical absorption coefficient throughout a major portion of the solar spectrum. It can be deposited in thin f i l m s having suitable electronic qualities on low cost substrates by a variety of methods. Modification of electronic properties such as band gap using ternary alloys has been accomplished, thus making the system versatile as well as robust.This program marks the entry of Solarex into the development of CIS based photovoltaic (PV) product. This initial effort began with the development of manufacturable deposition methods for all required thin ilm layers and the development and understanding of processes using those methods. It necessarily included demonstration of the potential for high conversion efficiency, evidenced by the achievement of 14.4% conversion efficiency (total area) in small cells and followed with the development of viable methods for module segment formation and interconnection. Finally; these process steps were integrated to fabricate monolithic CIS based submodules which exhibited aperture area efficiencies exceeding 11%.A more important result of this program is the basis of understanding that has been established in developing this material for PV applications. This basis of understanding is absolutely necessary to address issues of manufacturability and cost which are of paramount importance to the goal of commercialization. Early in the program, it was recognized that manL&acturability would be determined by successful solutions to issues of yield, reproducibility and control as much as by material and energy costs, conversion efficiency and process speed.Yield is strongly affected by shunt formation in modules, and shunt formation is in turn a strong function of the method used for absorber layer deposition. Issues of control and reproducibility are also strongly related to the absorber formation process. Accordingly, a significant effort was undertaken during this program to explore several alternative methods for absorber layer formation with attention to these issues. SpecZcally, the absorber layer formation techniques which were evaluated included: sputtering elemental precursors at low temperature followed by reaction at 'high temperature, a hybrid process using sputtered metallic precursors followed by reaction at high temperatures in an environment of elemental selenium, co-evaporation and concurrent reaction using elemental sources, and evaporation and/or sputtering of binary selenide precursors followed by reaction at high temperature with selenium. As a result, Solarex has identified at least one absorber formation process which is very robust ...

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Section: Robustness and Process Tolerance Of Variabilitymentioning

confidence: 98%

mentioning

confidence: 99%

Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

Arya¹,

Fogleboch²,

Keßler³

et al. 1996

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“…Elemental profiles typical of the SSI graded absorber structures are presented in Figure 4. Efficiency, voltage and adhesion improvements have been reported for the SSI graded absorber structure (2,15,16). This graded absorber structure is distinct from an absorber structure with a nearly uniform gallium or sulfur concentration throughout the absorber, although both types of structure may improve device efficiency.…”

Section: Ssi Cis Processmentioning

confidence: 98%

Thin-film photovoltaic partnership -- CIS-based thin film PV technology: Final technical report, September 1995--December 1998

Tarrant¹

1999

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PrefaceSiemens Solar Industries (SSI) has pursued the research and development of CuInSe 2 -based thin film PV technology since 1980 (1). SSI began a 3-year, 3 phase cost-shared subcontract (No. ZN-1-19019-5) on May 1, 1991 with the overall project goal of fabricating a large area, stable, 12.5% aperture efficient encapsulated CIS module by scaleable, low-cost techniques on inexpensive substrates. At the start of this subcontract SSI had demonstrated a 14.1% efficient 3.4 cm 2 active-area cell, unencapsulated integrated modules with aperture efficiencies of 11.2% on 940 cm 2 and 9.1% on 3900 cm 2 , and an encapsulated module with 8.7% efficiency on 3883 cm 2 (verified by NREL). Subcontract accomplishments included demonstration of encapsulated module efficiencies that were at that time the highest reported minimodule efficiencies for any thin film technology (encapsulated 12.8% efficient mini-module on 68.9 cm 2 and an NREL-verified 12.7% efficient unencapsulated circuit on 69 cm 2 with a prismatic cover), demonstration of a champion large area (3860 cm 2 ) encapsulated module efficiency of 10.3% (verified by NREL) that was the first thin film module of its size to exceed the 10% efficiency level, and delivery to NREL of a one kilowatt array of large area (~3890 cm2 ) approximately 30 watt modules (2).The primary objective of this subcontract (#ZAF-5-14142-03) is to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. The primary goals for the project are to deliver a champion prototype 13% efficient large area module and to deliver sets of modules in 1 kW arrays composed of steadily increasing efficiency, reaching 1 kW of 12% efficient large-area modules by the end of the third year, demonstrating performance as well as commercial viability. This focus on sets of high-performance modules as deliverables reflects SSI's commitment to demonstrating a reliable low-cost product. This document is the final subcontract report on progress toward these objectives and goals through the three-year period of this subcontract, September 1995 through December 1998. AcknowledgmentsSiemens Solar Industries wishes to acknowledge the contributions of the following people and organizations. SummaryMultinary Cu(In,Ga)(Se,S)2 absorbers (CIS-based absorbers) are promising candidates for reducing the cost of photovoltaics well below the cost of crystalline silicon. The primary objective of this subcontract (#ZAF-5-14142-03) is to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. The primary goals for the project are to deliver a champion prototype 13% efficient large area module and to deliver sets of modules in 1 kW arrays composed of steadily increasing efficiency, reaching 1 kW of 12% efficient large-area modules by the end of the third year, demonstrating performance as well as commercial viability. A major contract wor...

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“…Elemental profiles typical of the SSI graded absorber structures are presented in Figure 6. Efficiency, voltage, and adhesion improvements have been demonstrated for the SSI graded absorber structure [10,11]. Figure 7 illustrates the module configuration used for prototypes and products during this subcontract.…”

Section: Ssi Cis Processmentioning

confidence: 99%

CIS Modules Process R&D: Final Technical Report, October 2005 - June 2006

Tarrant¹

2006

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online ordering: http://www.ntis.gov/ordering.htm Printed on paper containing at least 50% wastepaper, including 20% postconsumer waste PrefaceShell Solar Industries (SSI), formerly Siemens Solar Industries, has pursued the research and development of CuInSe 2 -based thin film PV technology since 1980. At the start of subcontract activities with NREL, SSI had demonstrated a 14.1% efficient 3.4 cm 2 active-area cell, unencapsulated integrated modules with aperture efficiencies of 11.2% on 940 cm 2 and 9.1% on 3900 cm 2 , and an encapsulated module with 8.7% efficiency on 3883 cm 2 .Research on High-Efficiency, Large-Area CuInSe 2 -Based Thin-Film Modules SSI began a 3-year, 3 phase cost-shared subcontract (No. ZN-1-19019-5) [1] on May 1, 1991 with the overall project goal of fabricating a large area, stable, 12.5% aperture efficient encapsulated CIS module by scaleable, low-cost techniques on inexpensive substrates. Subcontract accomplishments were facilitated by addressing module reproducibility issues using small area test devices and mini-modules. Statistical process control disciplines were adopted to rigorously quantify process reproducibility. SSI addressed uniformity and reproducibility of absorber formation, interactions of the substrate with the absorber, and performance losses near interconnects. Subcontract accomplishments included demonstration of encapsulated module efficiencies that were at that time the highest reported mini-module efficiencies for any thin film technology (encapsulated 12.8% efficient mini-module on 68.9 cm 2 and an NREL-verified 12.7% efficient unencapsulated circuit on 69 cm 2 with a prismatic cover), demonstration of a champion large area (3860 cm 2 ) encapsulated module efficiency of 10.3% that was the first thin film module of its size to exceed the 10% efficiency level, and delivery to NREL of a one kilowatt array of large area (~3890 cm2 ) approximately 30 watt modules. TFPPP-1From September 1995 through December 1998, SSI participated in a 3-year, 3 phase cost-shared Thin Film Photovoltaics Partnership Program subcontract (No. ZAF-5-14142-03) [2]. The primary objective of this subcontract was to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. Outdoor testing, accelerated environmental testing, and packaging development progressed throughout all phases of this subcontract. During Phase 1, SSI rigorously demonstrating process reproducibility and yield for a 10x10-cm monolithically interconnected "mini-module" baseline process and demonstrated a 13.6% aperture area efficient mini-module. During Phase 2, SSI demonstrated the need to replace an existing large area reactor with a reactor based on a more direct scale-up of the baseline reactor, built a new large area reactor, and demonstrated comparable performance for the mini-modules baseline and larger 28x30-cm circuit plates. SSI developed products and prototype large area modules using a new package designed to integ...

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I-III-VI/sub 2/ multinary solar cells based on CuInSe/sub 2/

Cited by 24 publications

References 2 publications

Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

Thin-film photovoltaic partnership -- CIS-based thin film PV technology: Final technical report, September 1995--December 1998

CIS Modules Process R&D: Final Technical Report, October 2005 - June 2006

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