<i>In</i> <i>situ</i> investigation of silicon surface cleaning and damage by argon electron cyclotron resonance plasmas

Hu, Y. Z.; Buaud, P. P.; Wang, Y.; Spanos, L.; Irene, E. A.

doi:10.1063/1.110849

Cited by 8 publications

(7 citation statements)

References 18 publications

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“…In p-CdTe/n-CdS heterojunction, there is no energy spike in the CB; however, the interatomic distance and thermal expansion coefficient of CdS are smaller compared to CdTe. 250 One cannot fabricate an efficient CdTe/CdS heterojunction because of the large difference in lattice (or thermal) mismatch and different crystallographic structure that are associated with dislocation network at atomically abrupt interfaces, which act as electronic defects to promote the recombination process. 251,252 Theoretical calculations have indicated that carrier generation is highest in the vicinity of the CdS/CdTe junction and declines by two orders of magnitude within the rst 1 mm, interfacing with the window layer near the depletion region.…”

Section: Reviewmentioning

confidence: 99%

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Kumar

Rao

2014

Energy Environ. Sci.

372

209

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Section: Reviewmentioning

confidence: 99%

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Kumar

Rao

2014

Energy Environ. Sci.

372

209

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“…[1][2][3] Diffusion of Cu or Al into the Si or SiO 2 makes it imperative to use a diffusion barrier. There are two conventional ways of reducing the RC delay, one of which is to reduce the resistivity in the metal lines.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch

Matsuo¹,

Standaert²,

Allen³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Cleaning of CHF 3 plasma-etched SiO 2 /SiN/Cu via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vaporsThe cleaning of Al, TiN, and Cu blanket samples was investigated in a high density inductively coupled plasma reactor, and compared with results for silicon. After simulating the dielectric overetch exposure of these substrates to a CHF 3 discharge, an in situ O 2 plasma clean and subsequent Ar ϩ premetal sputter clean were performed and evaluated using ellipsometry and x-ray photoelectron spectroscopy. Following the fluorocarbon exposure, significant C and F residues were observed. Exposure to a O 2 plasma clean greatly reduced this contamination. Subsequent treatment with an Ar ϩ sputter further reduced the thickness of the modified surface layer. Comparisons of the cleaning results with silicon suggest an efficient cleaning procedure, especially in the cases of copper and titanium nitride. The response of several blanket, oxide-like low-K dielectrics to the O 2 plasma treatment were also studied and compared to SiO 2 . While a fluorinated SiO 2 ͑SiOF͒ exhibited SiO 2 -like stability, deep modifications were observed in both hydrogen silsesquioxane and methyl silsesquioxane, consistent with the removal of hydrogen and carbon from these films. These results were compared to a dedicated chamber design, where no fluorocarbons contaminate the reactor. The dedicated chamber methodology offered no significant advantage.

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“…Previously, we have used in situ spectroscopic ellipsometry ͑SE͒ to establish models for Si and Ge oxidation, 8,9,16 -18 and single wavelength ellipsometry ͑SWE͒ to follow processes in real time, [19][20][21] and both SE and SWE are similarly used in this study.…”

Section: Introductionmentioning

confidence: 99%

In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

Wang

Irene

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In situ real time single wavelength ellipsometry and spectroscopic ellipsometry were used to monitor electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2 on Si and Ge at substrate temperatures from floating temperature (<50 °C) to 400 °C. Dielectric layers were evaluated by capacitance–voltage measurements. Single wavelength ellipsometry and x-ray photoelectron spectroscopy results show that oxidation occurred along with SiO2 deposition at the initial stage of plasma enhanced chemical vapor deposition. The real time oxidation analysis shows that the subcutaneous oxidation follows parabolic growth kinetics during SiO2 deposition. The parabolic rate coefficient is proportional to the voltage drop across the subcutaneous oxide layer, and yields temperature activated transport. The subcutaneous oxidation of Ge yields a Ge rich oxide that degrades the electrical properties of metal–oxide capacitors. A thin Si layer deposited at room temperature before SiO2 deposition protects the Ge surface from undesirable oxidation during SiO2 deposition. The required thickness of Si layer is predicted. Electron cyclotron resonance plasma oxidation at 400 °C after SiO2 deposition reduces the slow trap states. An Al/SiO2/Si/Ge structure shows improved electrical properties of metal–oxide Ge capacitors. For c-Si substrates, a rapid thermal anneal of the deposited SiO2 in high vacuum can effectively eliminate the OH group incorporation, and thus reduces both interface trapped charge and slow trap states.

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In situ investigation of silicon surface cleaning and damage by argon electron cyclotron resonance plasmas

Cited by 8 publications

References 18 publications

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch

In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

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