In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique

Abstract

Structural and electrical characterization of microcrystalline silicon films prepared by a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system

Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers

“…This is known to lead to the crystalline state, together with the formation of volatile species such as SiH 4 , Si 2 H 6 , and H 2 . 7 Turning now to the thermally nanocrystallized samples, the data provided by Raman measurements allow one to note the compressive character of the stress whose values of some hundreds of MPa remain significantly lower than those of 2000-4000 of MPa reported by Iqbal et al for samples obtained by chemical transport method using a hydrogen plasma. 28 This allows to point out the relatively relaxed structure of our material.…”

“…This is due to a preferential etching during growth of energetically unfavorable bonds at the surface of the growing films by the hydrogen species. 7 The prior incorporation of hydrogen may increase the nucleation sites and influence also the growth kinetics of the silicon crystallites. Thus, the nature of the grain boundaries in the thermally crystallized silicon would depend on the hydrogen content and configurations in the basic material.…”

Microcrystalline silicon solar cell using p-a-Si:H window layer deposited by photo-CVD method

“…This is caused by an increase of the amorphous silicon phase with T sub . Because the amount of hydrogen atoms near the growing surface decreases as T sub increases, the fraction of amorphous silicon phase increases with T sub [8][9][10].…”

Amorphous and Microcrystalline Silicon Solar Cells

“…(i) The surface diffusion model [59], first proposed by Matsuda [17] in 1983, states that the chemically activated H diffusion at the surface as well as the coverage of the surface by hydrogen are important prerequisites for the growth precursors to find favourable sites for microcrystalline growth. (ii) The chemical transport model by Veprek et al [60] in 1987 is based on the equilibrium between growth and etching at the surface.…”