<i>In situ</i>access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

Supplie, Oliver; Hannappel, Thomas; Pristovsek, Markus; Döscher, Henning

doi:10.1103/physrevb.86.035308

Cited by 21 publications

(47 citation statements)

References 29 publications

(29 reference statements)

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“…In this Letter we report first-principles calculations of the IDA of thin GaP layers on Si(001) and compare them to experimental measurements by Supplie et al [5]. The agreement between theory and experiment is excellent when the last complete layer in GaP is P (as in the experiment) and when the interface is "gapped," i.e., when there is a gap between the interface valence and conduction band states.…”

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confidence: 72%

“…Below we show that it is the optical transitions between these interface localized states that are responsible for the observed IDA [5]. The states are localized within three Si bilayers of the interface.…”

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confidence: 99%

“…Interface RA has been measured in several cases including InP=GaAsð001Þ [16], ZnSe=GaAsð001Þ and SiO 2 =Sið112Þ [17], AlAs=GaAsð001Þ [18], and GaP= Sið001Þ [5,12,13]. There have been few calculations of optical interface anisotropies.…”

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confidence: 99%

“…RA [5,12,13], LEED, XPS, and density functional theory (DFT) calculations [12,14] have shown that GaP grown on Si(001) by MOVPE has a mixed (2 × 2) and cð4 × 2Þ P dimer surface. The dimers are tilted and have a H atom on the down-tilted P atom.…”

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confidence: 99%

“…Applications for GaP on Si include buffer layers in multijunction GaAsP=Si photovoltaics [2,3]. Obtaining a high quality interface and avoiding defects such as threading dislocations [3] or antiphase domains [4,5] in the GaP layer is essential to the performance of III-V optoelectronic devices [3]. Techniques for observing the microscopic properties of the buried interface between a thin dielectric layer and an underlying dielectric substrate are limited.…”

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confidence: 99%

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Dielectric Anisotropy of the GaP/Si(001) Interface from First-Principles Theory

Kumar

Patterson

2017

Phys. Rev. Lett.

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First-principles calculations of the dielectric anisotropy of the GaP=Sið001Þ interface are compared to the anisotropy extracted from reflectance measurements on GaP thin films on Si(001) [O. Supplie et al., Phys. Rev. B 86, 035308 (2012)]. Optical excitations from two states localized in several Si layers adjacent to the interface result in the observed anisotropy of the interface. The calculations show excellent agreement with experiment only for a gapped interface with a P layer in contact with Si and show that a combination of theory and experiment can reveal localized electronic states and the atomic structure at buried interfaces.

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confidence: 72%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Dielectric Anisotropy of the GaP/Si(001) Interface from First-Principles Theory

Kumar

Patterson

2017

Phys. Rev. Lett.

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Epitaxial III–V Films and Surfaces for Photoelectrocatalysis

et al. 2012

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Efficient photoelectrochemical devices for water splitting benefit from the highest material quality and dedicated surface preparation achieved by epitaxial growth. InP(100)-based half-cells show significant solar-to-hydrogen efficiencies, but require a bias due to insufficient voltage. Tandem absorber structures may provide both adequate potential and efficient utilization of the solar spectrum. We propose epitaxial dilute nitride GaPNAs photocathodes on Si(100) substrates to combine close-to-optimum limiting efficiency, lattice-matched growth, and established surface preparation. Prior to a discussion of the challenging III-V/Si(100) heterojunction, we describe the closely related epitaxial preparation of InP(100) surfaces and its beneficial impact on photoelectrochemical water-splitting performance. Analogies and specific differences to GaP(100) surfaces are discussed based on in situ reflectance anisotropy and on two-photon photoemission results. Preliminary experiments regarding GaP/Si(100) photoelectrochemistry and dilute nitride GaPN heteroepitaxy on Si(100) confirm the potential of the GaPNAs/Si tandem absorber structure for future water-splitting devices.

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In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

Cited by 21 publications

References 29 publications

Dielectric Anisotropy of the GaP/Si(001) Interface from First-Principles Theory

Dielectric Anisotropy of the GaP/Si(001) Interface from First-Principles Theory

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Epitaxial III–V Films and Surfaces for Photoelectrocatalysis

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