<i>In situ</i>, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

Kobayashi, Nobuhiko P.; Ramachandran, T.; Chen, P.; Madhukar, A.

doi:10.1063/1.116580

Cited by 230 publications

(127 citation statements)

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“…It has also been observed that the size distribution of the 3D islands is very narrow. The above observations have been reported for the growth of Ge on Si͑100͒, 2,4,[11][12][13][14][15][16] InAs on GaAs͑100͒, [17][18][19][20][21][22] InGaAs on GaAs, 3,[23][24][25] and InP on In 0.5 Ga 0.5 P. 26 In all cases the lattice misfit is positive and very large ͑4.2, 7.2, and Ϸ3.8 % for Ge/Si, InAs/GaAs, and InP/In 0.5 Ga 0.5 P, respectively͒ for semiconductor materials, which are characterized by directional and brittle chemical bonds. The only exception to the authors' knowledge is the system PbSe/PbTe͑111͒ in which the misfit is negative (Ϫ5.5%) and the overlayer is expanded.…”

Section: Introductionsupporting

confidence: 49%

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Korutcheva

Turiel²,

Markov

2000

Phys. Rev. B

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The formation of coherently strained three-dimensional ͑3D͒ islands on top of the wetting layer in the Stranski-Krastanov mode of growth is considered in a model in 1 ϩ 1 dimensions accounting for the anharmonicity and nonconvexity of the real interatomic forces. It is shown that coherent 3D islands can be expected to form in compressed rather than expanded overlayers beyond a critical lattice misfit. In expanded overlayers the classical Stranski-Krastanov growth is expected to occur because the misfit dislocations can become energetically favored at smaller island sizes. The thermodynamic reason for coherent 3D islanding is incomplete wetting owing to the weaker adhesion of the edge atoms. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. This explains the experimentally observed narrow size distribution of the 3D islands. The 2D-3D transformation takes place by consecutive rearrangements of monoto bilayer, bi-to trilayer islands, etc., after the corresponding critical sizes have been exceeded. The rearrangements are initiated by nucleation events, each one needing to overcome a lower energetic barrier than the one before. The model is in good qualitative agreement with available experimental observations.

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Section: Introductionsupporting

confidence: 49%

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Korutcheva

Turiel²,

Markov

2000

Phys. Rev. B

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“…There is oneto-one In nanocrystal to InAs island correspondence, because the initial and final densities match. In accordance with previous reports [10], the InAs islands flatten and develop a local wetting layer elongated along [0][1][2][3][4][5][6][7][8][9][10][11]. For the symmetric In nanocrystals on the c(4 x 4) reconstructed surface ( Fig.…”

Section: Resultssupporting

confidence: 73%

“…Such applications require reproducible and well controllable means of obtaining low-density QDs, as a single QD is the basic building block of the above mentioned devices. Low-density InAs/GaAs QDs can be obtained by molecular beam epitaxy (MBE) using the Stransld-Krastanov (SK) growth mode and small InAs coverage above the critical thickness [6] or extremely small growth rates [7]. An alternative, yet so far widely unexplored route to achieve this is to use droplet epitaxy [8][9][10], where one first deposits metallic liquid In droplets or, in our case epitaxial In nanocrystals and afterwards recrystalizes them under As flux.…”

Section: Introductionmentioning

confidence: 99%

Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Urbanczyk

Nötzel

2012

Journal of Crystal Growth

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We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 iim~2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional Stransld-Krastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs.

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“…The geometry of a quantum dot grown by molecular beam epitaxy varies widely with the growth condition. [52][53][54] Based on the experimentally achievable geometries, we model a lensshaped self-assembled InAs dot with diameter 15 nm and height 6 nm, as shown in Fig. 1.…”

Section: ͑2͒mentioning

confidence: 99%

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Lee

Allmen

Oyafuso

et al. 2005

Journal of Applied Physics

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Lee, Seungwon; von Allmen, Paul; Oyafuso, Fabiano; and Klimeck, Gerhard, "Effect of electron-nuclear spin interactions for electronspin qubits localized in InGaAs self-assembled quantum dots" (2005 The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in an InGaAs self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The electron Zeeman splitting induced by the electron-nuclear spin interaction is estimated in the presence of an inhomogeneous environment characterized by a random nuclear spin configuration, by the dot-size distribution, alloy disorder, and interface disorder. Due to these inhomogeneities, the electron Zeeman splitting varies from one qubit to another by the order of 10 −6 , 10 −6 , 10 −7 , and 10 −9 eV, respectively. Such fluctuations cause errors in exchange operations due to the inequality of the Zeeman splitting between two qubits. However, the error can be made lower than the quantum error threshold if an exchange energy larger than 10 −4 eV is used for the operation. This result shows that the electron-nuclear spin interaction does not hinder quantum-dot based quantum computer architectures from being scalable even in the presence of inhomogeneous environments.

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In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

Cited by 230 publications

References 1 publication

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

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