2009
DOI: 10.1080/17458080903236407
|View full text |Cite
|
Sign up to set email alerts
|

In situchemically polymerised polyaniline nanolayer: characterisation and sensing materials

Abstract: An experiment has been carried out to study the formation and characterisation of polyaniline (PANi) nanolayer growth directly on glass and alumina substrate by in situ chemical polymerisation. It has been found that the growth mode of the PANi nanolayer depends on the synthesis time and mechanical agitation. The difference in growth modes results in the form of granular, planar or fibrillar structure and then affects the chemical and electronic structure of the PANi nanolayer. As a result of gas-PANi chain in… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2010
2010
2024
2024

Publication Types

Select...
4
1

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 16 publications
0
1
0
Order By: Relevance
“…As a result, the materials has shown a variety of potential applications such as lightweight battery electrodes, electro-magnetic shielding devices, anticorrosion coatings, and sensors [3,7]. In order to enhance the application, coupling PANi with suitable nanostructures is usually used as effective approaches to modify the electronic structure of PANi or design new useful features [8,9]. Titanium dioxide (TiO2) is a typical metal oxide and belongs to n-type wide bandgap semiconductor group.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the materials has shown a variety of potential applications such as lightweight battery electrodes, electro-magnetic shielding devices, anticorrosion coatings, and sensors [3,7]. In order to enhance the application, coupling PANi with suitable nanostructures is usually used as effective approaches to modify the electronic structure of PANi or design new useful features [8,9]. Titanium dioxide (TiO2) is a typical metal oxide and belongs to n-type wide bandgap semiconductor group.…”
Section: Introductionmentioning
confidence: 99%