In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4–CH4–H2 mixtures with optical emission spectroscopy monitoring

Yurov, Vladimir; Bolshakov, Andrey; Ralchenko, Victor; Fedorova, Irina; Martyanov, Artem; Pivovarov, Pavel; Artemov, Vladimir; Khomich, Andrew; Khmelnitskiy, Roman; Boldyrev, Kirill

doi:10.1039/d3cp03967f

Phys. Chem. Chem. Phys.

2023

DOI: 10.1039/d3cp03967f

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In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH₄–CH₄–H₂ mixtures with optical emission spectroscopy monitoring

Vladimir Yurov,

Andrey Bolshakov,

Victor Ralchenko

et al.

Abstract: Doping of homoepitaxial diamond films by microwave plasma CVD in GeH4–CH4–H2 mixtures with in situ control using optical emission spectroscopy is performed to produce germanium-vacancy (GeV) color centers emitting in yellow spectral range.

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2024

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Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors

Martyanov,

Tiazhelov,

Voronov

et al. 2024

Physica Status Solidi (a)

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The structure and properties of polycrystalline chemical vapor deposition (CVD) diamond coatings grown by microwave plasma CVD in H2–CH4 mixtures can be effectively controlled by nitrogen admixture in the process gas. Here, a comparative study of adding nitrogen from different precursors, N2 and ammonia NH3, in concentrations up to 0.4%vol on grain size, texture, surface roughness, and sp2/sp3 ratio of the produced films on Si substrates is performed. A transition from microcrystalline to smooth nanocrystalline diamond structure is found to occur at a certain concentration of the precursor, for NH3 this threshold concentration being much lower, 0.02–0.1%, than for N2. The higher activity of ammonia is associated with easier formation of cyano radicals in the plasma as detected with optical emission spectroscopy, in accord with the lower bond‐dissociation energy for NH3 compared to N2. On the contrary, a smaller addition (0.004%) of either N2 or NH3 promotes almost doubling of the growth rate, while preserving the microcrystalline structure of the film. The results establish ammonia as a convenient alternative precursor to commonly used N2 added in the plasma for the diamond film structure modifications.

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Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors

Martyanov,

Tiazhelov,

Voronov

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

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Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H2-CH4-O2 gas mixtures at high microwave power densities

Bolshakov,

Yurov,

Fedorova

et al. 2024

Diamond and Related Materials

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In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH₄–CH₄–H₂ mixtures with optical emission spectroscopy monitoring

Abstract: Doping of homoepitaxial diamond films by microwave plasma CVD in GeH4–CH4–H2 mixtures with in situ control using optical emission spectroscopy is performed to produce germanium-vacancy (GeV) color centers emitting in yellow spectral range.

Cited by 2 publications

References 52 publications

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors

Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H2-CH4-O2 gas mixtures at high microwave power densities

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In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4–CH4–H2 mixtures with optical emission spectroscopy monitoring

Abstract: Doping of homoepitaxial diamond films by microwave plasma CVD in GeH4–CH4–H2 mixtures with in situ control using optical emission spectroscopy is performed to produce germanium-vacancy (GeV) color centers emitting in yellow spectral range.

Cited by 2 publications

References 52 publications

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N2 and NH3 Precursors

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N2 and NH3 Precursors

Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H2-CH4-O2 gas mixtures at high microwave power densities

Contact Info

Product

Resources

About

In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH₄–CH₄–H₂ mixtures with optical emission spectroscopy monitoring

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors

Nitrogen‐Induced Microcrystalline‐to‐Nanocrystalline Structure Transition in Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition: Comparison of N₂ and NH₃ Precursors