In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces

Abstract

Articles you may be interested inMetal-semiconductor transition and magnetic properties of epitaxially grown Mn As ∕ Ga As superlattices Electrical and deep-level characterization of GaP 1 − x N x grown by gas-source molecular beam epitaxy In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces J.Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxy Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromideIn situ patterning and electrical characterization are used to study the electrical properties, reaction kinetics, and interface properties during reactions at Ni/n-GaAs interfaces. Ni contacts were formed in situ by deposition through a removable molybdenum shadow mask onto a GaAs͑100͒ c(4ϫ4) As-rich surface. Annealing at 300°C resulted in Ni 3 GaAs formation. Subsequent exposure of the Ni 3 GaAs to an As 4 flux at 350°C resulted in the formation of NiAs at the surface and the epitaxial regrowth of GaAs at the Ni x GaAs/GaAs interface. The GaAs regrowth thickness and the regrown GaAs electrical properties were determined electrically by in situ capacitance-voltage and currentvoltage measurements. An interlayer model was applied to explain the Schottky barrier height discrepancy between capacitance-voltage and current-voltage measurements for metal/GaAs contacts with regrown GaAs. The model predicts that the regrown GaAs interlayer is p type with a hole concentration of ϳ3ϫ10 15 holes/cm 3 .