In situelectrical resistance and activation energy of solid C₆₀under high pressure

Abstract

The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300–423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W—Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0.49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.

Solvated fullerenes, a new class of carbon materials suitable for high-pressure studies: A review

“…No metallization has been found. The resistivity was found to increase during the amorphization transition of C 60 [68].…”

“…This value is almost twice that of diamond (442 GPa), which is the hardest known material [63]. For this and several other reasons, high-pressure studies of fullerenes have drawn a lot of attentions since the 1990s [58,[64][65][66][67][68][69][70]. C 60 molecules form a face-centered cubic (fcc) structure under ambient conditions.…”