<i>In-situ</i> metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Liu, X.; Yeluri, Ramya; Kim, J.; Lal, Shalini; Raman, A.; Lund, Cory; Wienecke, Steven; Lu, Jing; Laurent, Matthew A.; Keller, S.; Mishra, Umesh K.

doi:10.1063/1.4817385

Cited by 28 publications

(26 citation statements)

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“…So far, there have only been very few reports on the characterization and passivation of the high-k/GaN interface trap states. 8,10 In this Letter, we show that a combination of in-situ nitrogen plasma and trimethylaluminum (TMA) pulsing prior to the deposition of high-k dielectrics allows for the reduction of trap density near the conduction band of GaN.…”

Section: Introductionmentioning

confidence: 98%

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Son¹,

Chobpattana²,

McSkimming³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report on in-situ nitrogen plasma cleaning, consisting of alternating cycles of nitrogen plasma and trimethylaluminum prior to the dielectric deposition, as an effective method to passivate Al2O3/GaN interface states. The nitrogen plasma pretreatment reduces the frequency dispersion in capacitance–voltage and the conductance peak in conductance–voltage measurements, compared to interfaces cleaned with a hydrogen plasma pretreatment. It is shown that the decrease of the trap density (Dit) below the conduction band is correlated with the suppression of Ga-O bonding and the formation of an aluminum oxynitride interfacial layer.

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Section: Introductionmentioning

confidence: 98%

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Son¹,

Chobpattana²,

McSkimming³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Recently, the in situ growth of Al 2 O 3 dielectrics on GaN was achieved by using metalorganic chemical vapor deposition (MOCVD) in a single reactor chamber without breaking the vacuum. 1 The resulting metal-oxide-semiconductor capacitors (MOSCAPs) were subjected to a series of capacitance-voltage (C-V) measurements with and without stress 1,2 and ultraviolet (UV) illumination, [1][2][3][4] and some exhibited very promising characteristics, namely, small hystereses and charge trappings as well as average near-interface state densities on the order of 10 12 cm À2 eV À1 . 1 The C-V characterization method of our recent work is briefly reiterated here.…”

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confidence: 99%

“…1 The resulting metal-oxide-semiconductor capacitors (MOSCAPs) were subjected to a series of capacitance-voltage (C-V) measurements with and without stress 1,2 and ultraviolet (UV) illumination, [1][2][3][4] and some exhibited very promising characteristics, namely, small hystereses and charge trappings as well as average near-interface state densities on the order of 10 12 cm À2 eV À1 . 1 The C-V characterization method of our recent work is briefly reiterated here. 1,2 Two hystereses, DV FB1 and DV FB2 , are measured from the first and second pairs of depletion to accumulation (D to A) and accumulation to depletion (A to D) sweeps, and DV FB1 is measured with an additional 10-min stress in accumulation.…”

mentioning

confidence: 99%

“…1,2 Two hystereses, DV FB1 and DV FB2 , are measured from the first and second pairs of depletion to accumulation (D to A) and accumulation to depletion (A to D) sweeps, and DV FB1 is measured with an additional 10-min stress in accumulation. 1,2 The sweep direction and sequence are the same as those illustrated in Fig. 1 of this work.…”

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confidence: 99%

“…DV FB1 À DV FB2 can be used to estimate the density of initially empty trap states with relatively slow electron emission rates (slow traps), and DV FB2 represents the density of trap states with fast electron emission rates (fast traps), respectively. 1 However, the physical locations of those traps cannot be determined by using the method above on a single MOSCAP with only one oxide thickness. 1 Moreover, since fixed charge and initially filled slow traps do not induce any C-V hysteresis, their concentrations cannot be determined by using this method.…”

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confidence: 99%

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Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

Liu

Kim

Yeluri

et al. 2013

Journal of Applied Physics

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Articles you may be interested inNitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxidesemiconductor capacitors using atmospheric metal-organic chemical vapor deposition Appl. Phys. Lett. 105, 033513 (2014); 10.1063/1.4891431 In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Appl. Phys. Lett. 103, 053509 (2013); 10.1063/1.4817385Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors Appl.Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphireIn situ Al 2 O 3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) were grown by metalorganic chemical vapor deposition and measured using capacitance-voltage techniques. The flat band voltage and hysteresis had a linear relationship with Al 2 O 3 thickness, which indicates the presence of fixed charge and trap states that are located at or near the Al 2 O 3 /GaN interface. In addition, slow and fast near-interface states are distinguished according to their different electron emission characteristics. Atom probe tomography was used to characterize the in situ MOSCAPs to provide information on the Al/O stoichiometric ratios, Al 2 O 3 /GaN interface abruptnesses, and C concentrations. The in situ MOSCAPs with Al 2 O 3 deposited at 700 C exhibited an order of magnitude higher fast near-interface states density but a lower slow near-interface states density compared with those with Al 2 O 3 deposited at 900 and 1000 C. Furthermore, the 700 C MOSCAPs exhibited a net negative fixed near-interface charge, whereas the 900 and 1000 C MOSCAPs exhibited net positive fixed near-interface charges. The possible origins of various fixed charge and trap states are discussed in accordance with the experimental data and recently reported first-principals calculations. V C 2013 AIP Publishing LLC. [http://dx.

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In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

Roy

Chmielewski

Bhattacharyya

et al. 2021

Adv Elect Materials

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as the gate dielectric for device applications. For transistor applications, a gate dielectric should exhibit low leakage currents, have low interface trap densities to achieve a controllable threshold voltage (V T ), and should also have a higher breakdown field compared to the underlying semiconductor. Many insulators such as SiO 2 , [3][4][5][6] Al 2 O 3 , [7,8] SiN, [9] and HfO 2 [9,10] have been studied as a gate oxide material and passivation layers for gallium oxide devices. Extreme permittivity materials such as barium titanate (BaTiO 3 ) were also studied and used as dielectric material in β-Ga 2 O 3 -based transistors and heterojunction Schottky barrier diodes. [11][12][13] Complex oxides such as ternary rare earth alloys (Y 0.6 Sc 0.4 ) 2 O 3 were also investigated by Masten et al. as gate dielectric for β-Ga 2 O 3 -based metal oxide semiconductor (MOS) structures. [14] Among all the dielectric materials, Al 2 O 3 is studied and used most extensively for β-Ga 2 O 3 -based devices due to its compatibility with β-Ga 2 O 3 . Chabak et al. demonstrated various lateral MOSFETs with Al 2 O 3 as gate dielectric showing excellent field strength. [15][16][17] Li et al. also demonstrated β-Ga 2 O 3 -based vertical FinFET structures with outstanding figure of merit (FOM) using Al 2 O 3 as gate dielectric. [18][19][20] Jian et al. studied the effects of PDA on the interface trap density of the ALD deposited Al 2 O 3 on (001) β-Ga 2 O 3 . [21] In all these reported works the deposition of Al 2 O 3 is primarily performed using ex situ technique such as atomic layer deposition (ALD), where after its growth, the gallium oxide substrate or epilayer is taken to a different reactor for dielectric deposition. During such a transfer step, it is hard to completely remove any interface contamination. Using in situ deposition of Al 2 O 3 in the same reactor as the underlying Ga 2 O 3 , the surface of the Ga 2 O 3 can be kept pristine without exposure to the ambient. The quality of the dielectric could also improve due to the high temperature growth by metalorganic chemical vapor deposition (MOCVD) (500 to 1000 °C), compared to ALD (100 to 300 °C). MOCVD also enables high deposition rates, significantly higher than that of the ALD technique. MOCVD reactor can also facilitate high temperature in situ annealing which can reduce the dielectric/semiconductor interface state density as well as improve the bulk dielectric quality. The in situ growth of Al 2 O 3 on both Ga-face and N-face GaN has been studied extensively using MOCVD. [22][23][24][25][26] In this paper, we demonstrate for the first time in situ growth of Al 2 O 3 using MOCVD and High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal-organic chemical vapor deposition of Al 2 O 3 on β-Ga 2 O 3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al 2 O 3 is performed in the same reactor as Ga 2 O 3 using trimethylaluminum and O 2 a...

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In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Cited by 28 publications

References 32 publications

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

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In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Cited by 28 publications

References 32 publications

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

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In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition