ionic current therefore provides a simple single-molecule biosensing technique. [1][2][3][4] Indeed, over the past several decades, nanopores have proven to be versatile single-molecule sensing devices with applications ranging from DNA [5,6] and protein sequencing, [7,8] to ultra-dilute analyte detection, [9][10][11][12] polymer data storage, [13,14] and enzymology. [15] Nanopore sensors can be classified as either biological [16] or solid-state. [17] Biological nanopores generally consist of barrel shaped proteins that self-insert into lipid or synthetic membranes. Solid-state nanopores, however, are typically formed in thin (<50 nm) dielectrics such as SiN x , [18] TiO 2 , [19] and HfO 2 [20] or 2D materials such as graphene, [21][22][23] MoS 2 , [6] and hBN. [24] The ability to fabricate solid-state nanopores of different diameters and operate them in a wide range of environmental conditions makes them particularly attractive for many of the applications discussed above. [1,17] In the past, solid-state nanopores were typically fabricated using focused charged particle beams to locally sputter material from the membrane. [25][26][27][28] However, this requires specialized equipment, trained operators, and is a labor intensive process thus limiting the availability of this technique to the wider research community.To overcome these issues, a technique called controlled breakdown (CBD) has been developed to fabricate nanopores in solid-state membranes. [29][30][31] In this method, an electric Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.4-1 V nm −1 across the membrane to induce a current, and eventually, breakdown of the dielectric. Although previous studies have performed controlled breakdown under a range of different conditions, the mechanism of conduction and breakdown has not been fully explored. Here, electrical conduction and nanopore formation in SiN x membranes during controlled breakdown is studied. It is demonstrated that for Si-rich SiN x , oxidation reactions that occur at the membrane-electrolyte interface limit conduction across the dielectric. However, for stoichiometric Si 3 N 4 the effect of oxidation reactions becomes relatively small and conduction is predominately limited by charge transport across the dielectric. Several important implications resulting from understanding this process are provided which will aid in further developing controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.