2020
DOI: 10.1088/1361-6641/ab8e0d
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In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

Abstract: The understanding of the influence of energetic ions on the transport properties of semiconductor materials is essential to design the devices for use in a radiation environment. In this article, an in-situ investigation of the effect of 100 MeV O 7+ irradiation on the current-voltage characteristics of the Pd/n-Si Schottky barrier structure is carried out. It is observed that the interface barrier parameters (ideality factor, Schottky barrier height and reverse saturation current) are a strong function of ion… Show more

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Cited by 3 publications
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