2016
DOI: 10.1002/pip.2819
|View full text |Cite
|
Sign up to set email alerts
|

In situ sulfurization to generate Sb2(Se1 − xSx)3 alloyed films and their application for photovoltaics

Abstract: Because of its tunable band gap and band position, Sb2(Se1 − xSx)3 (0 ≤ x ≤ 1) is a promising light‐absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single‐phase polycrystalline Sb2(Se1 − xSx)3 thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single‐phase, highly crystalline Sb2(Se1 − xSx)3 films with x = 0.09, 0.20, 0.31, and 0.43 were successfully obtain… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

7
58
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 79 publications
(66 citation statements)
references
References 37 publications
7
58
1
Order By: Relevance
“…And the grain size of Sb 2 (Se x S 1–x ) 3 shrank from 500 to 200 nm as Se contents increased gradually. This evolution trend was consistent with XRD results, the same as our previous report …”
Section: Resultssupporting
confidence: 93%
See 2 more Smart Citations
“…And the grain size of Sb 2 (Se x S 1–x ) 3 shrank from 500 to 200 nm as Se contents increased gradually. This evolution trend was consistent with XRD results, the same as our previous report …”
Section: Resultssupporting
confidence: 93%
“…The peak PCE was 4.17% achieved from Sb 2 (Se 0.68 S 0.32 ) 3 with a V oc of 0.42 V, a J sc of 19.8 mA cm −2 and an FF of 49.2%. Such PCE data was lower than the average value of the reported Sb 2 (S x Se 1–x ) 3 device and the main loss came from V oc and J sc . This occurrence might be due to the thicker CdS film, and some direct contact between the FTO and absorber layer appeared due to the rough surface of FTO and non‐uniformity of the overall device thickness …”
Section: Resultscontrasting
confidence: 70%
See 1 more Smart Citation
“…It is reported that a single-junction solar cell with a 1.17 eV absorber possesses theoretical open-circuit voltage (V oc ) of 0.90 V, short-circuit current density (J sc ) of 42 mA cm −2 and fill factor (FF) of 0.86, [17] which leads to ≈30% theoretical PCE. [18] However, the efficiency of the fabricated Sb 2 (S x ,Se 1-x ) 3 solar cell is lower than that of theory.…”
Section: Thin Film Solar Cellsmentioning
confidence: 99%
“…4i. Compared with vacuum-annealed Sb 2 S 3 /CdS device, selenized device had a satisfactory built-in electrical field at the p-n junction due to the favorable E g of Sb 2 S 3 (1.61 eV) which provided a higher V OC than Sb 2 Se 3 ( E g  = 1.2 eV) [28, 29]. Due to the gradient distribution of composition, selenized Sb 2 S 3 showed a continuous E v varying from − 5.37 to − 5.08 eV and a lower barrier for photogenerated positive carrier transport from p-n junction vicinity to the anode.…”
Section: Resultsmentioning
confidence: 99%