<i>In situ</i> synthesis of monolayer graphene on silicon for near-infrared photodetectors

Xiang, Peng; Wang, Gang; Yang, Siwei; Liu, Zhiduo; Zheng, Li; Xu, An; Zhao, Menghan; Zhu, Wei; Guo, Qinglei; Chen, Da

doi:10.1039/c9ra06792b

Cited by 10 publications

(2 citation statements)

References 31 publications

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“…Like our graphene-Si Schottky junction photodetector, our field-effect transistor and heating device also demonstrate excellent performance properties as compared to similar devices fabricated through other methods but without the need for any graphene layer transfer. [68][69][70]…”

Section: Photoelectric Response Data Was Obtained Using a Near-ir Pho...mentioning

confidence: 99%

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

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Section: Photoelectric Response Data Was Obtained Using a Near-ir Pho...mentioning

confidence: 99%

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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Section: Characterization Of Monolayer and Bilayer Graphene Synthesiz...mentioning

confidence: 99%

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

Wang,

Jiang,

Baldwin

et al. 2023

Preprint

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Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize layer-tunable graphene on arbitrary substrates without the post-synthesis layer transfer process. C ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates. Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed towards the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. ReaxFF was performed to elucidate the graphene formation mechanisms in this novel synthesis approach. Three ordinary devices using as-synthesized graphene were fabricated on Si, SiO2, and glass substrates to demonstrate the graphene quality of our layer-tunable and transfer-free synthesis approach and the excellent performance characteristics of these low-cost manufacturing devices: field-effect transistors, heating devices, and near-infrared photodetectors.

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Isolation enhancement technique in a dual-band THz MIMO antenna with single radiator

Singh

Varshney

2023

Opt Quant Electron

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In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

Abstract: Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source.

Cited by 10 publications

References 31 publications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

Isolation enhancement technique in a dual-band THz MIMO antenna with single radiator

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