“…[196] Further, the in situ conductive nanoindentation measurement technique assisted in calculating the quantum tunneling barrier height that leads to the quantum tunneling/percolation model of conductive nanocomposites such as nickel nanostrands to better understand the electronic properties, [289] aided to realize the electrical contact properties at the metal interfaces, particularly at NiCr/TiW films and Sn/SnO 2 /W structure, [296] detected the delamination process in quasi-static and oscillating dynamic experiments showing the simultaneous pop-in and the sudden drop in current were indicative of the delamination process in Ti x N y film, [306] and effectively characterized the MIM device (with conductive indenter as one contact) (Nb/Nb 2 O 5 /BDD tip) to understand the real-time asymmetry and nonlinearity behavior of the device. [308] Furthermore, this versatile technique helped in unraveling the influence of substrate, indenter geometry, and pile-up formation, loading rate, and contact depth on the electromechanical properties of Pt thin films at elastic and plastic nanocontacts under various loads and A c , [310] understanding the dislocation dynamics (slip events), contact issues during slip in materials such as single-crystal Au columns, Si, Ni 3 Al, and Vit105 BMG, where it could trace the slipping crystal without losing mechanical contact, [313] recognizing the localized strain field and lattice change around deformations and the effect of the electric field on plastic deformation in metals such as Al, Ti, and Ni, [321] explaining the electron scattering due to localized heating in shear bands, [322] and unravelling the electromechanical behavior of nanoporous metallic glass materials such as Pd-rich nanoporous metallic glass surface and the momentarily atomic-scale evolution under stress in BMGs such as Zr 50 Cu 40 Al 10 and Pd 40 Cu 30 Ni 10 P 20 for improving the fatigue performance. [323][324][325] In addition, nano-ECR coupled with the nanoindentation technique provided deep insights into the non-180 o domain wall dynamics in lanthanum-modified lead titanate thin films and threshold stress for depolarization, [358] facilitated the study of the local polarization and stability of polarization in FE thin films such as PZT and Mn-doped PZT for the better design and fabrication of MEMS, [351] utilized the inverse PE effect to quantify the d 33 of Sr-doped PZT and Sc x Al 1Àx N (0001) thin films without the need to go to the popular piezoelectric force microscopy (PFM), [359,365] and aided in confirming high electrical field induced strain of 5% in BFO films, which is higher than the conventional PE materials and comparable to SMAs.…”