<i>Introduction to Solid State Physics</i>by C. Kittel

Bates, L F

doi:10.1107/s0365110x54000448

Cited by 6 publications

(12 citation statements)

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“…This (as well as Casimir limit) approximation is apparently temperature-independent and not affected by the phonon energy (as long as the linear phonon dispersion remains valid), though expected to be physically meaningful only at relatively low temperatures (T < 100 K), when the (predominantly in-plane) phonon-phonon interactions (scattering) become relatively weak. 35 However, even for this temperature range, the estimated phonon lifetime obtained based on the Casimir limit approximation valid for the non-interacting single-phonon (N ≡ 1) states only. On the other hand, at elevated (T > 100 K) temperatures, the phonon lifetime within 2D flakes would be rather limited by the phononphonon interactions (scattering).…”

Section: Discussionmentioning

confidence: 90%

“…On the other hand, at elevated (T > 100 K) temperatures, the phonon lifetime within 2D flakes would be rather limited by the phononphonon interactions (scattering). 35,44 In other words, parameters of anharmonic atomic vibrations of the 2D lattices would eventually define the intensity (rate) of the phonon-phonon interactions (scattering) among various (though always integer, N = 2, 3, 4…) numbers of those quasi-particles. Indeed, the rate, Ω if , of such phonon-phonon scattering at the given number, N, of the interacting quasi-particles, is routinely evaluated based on the well-known Fermi's Golden Rule (FGR) 35,46 :…”

Section: Discussionmentioning

confidence: 99%

“…of those 2D materials. Indeed, mentioned above thermal characteristics are customarily evaluated based on the "single-particle" spectrum of (fundamental-or pure-states of) harmonic (noninteracting) longitudinal acoustic (LA) and transverse acoustic (TA) Debye's phonons with the linear dispersion, 35 while Eqs. 1-3 take into account as well essentially anharmonic manyparticle excited and coherent states of those phonons.…”

Section: Simulation Approachmentioning

confidence: 99%

“…1 has to be substituted (corrected) with its fully quantum Planck's (Bose-Einstein in general) counterpart in order to make the "refined" 2D GSM to be suitable for quantitative evaluations on lattice thermal capacity at an arbitrary absolute temperature, T. The analytical expression for the first (partial) derivative with respect to the temperature of the Planck's occupation factor is discussed in many textbooks (e.g., Ref. 35), and reads:…”

Section: Simulation Approachmentioning

confidence: 99%

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The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes

Ligatchev¹

2020

ECS J. Solid State Sci. Technol.

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Temperature dependencies of both harmonic (including contributions from the “flexural” modes) and anharmonic components of the isobaric lattice thermal capacity of square flakes of graphene, hexagonal boron nitride (h-BN) as well as of those of disulphides of molybdenum (MoS2) and tungsten (WS2) are simulated based on the many-body formalism denoted formerly as the “Generalized Skettrup Model” (GSM). This formalism (initially developed for the “first-principles” simulations on the essential features of electronic and optical bandtails of 3-dimensional (3D) polycrystalline and spatially non-homogeneous amorphous semi-conductors and insulators) had been refined herein for appropriate evaluations on the lattice thermal capacity of two-dimensional (2D) semiconductors. Obtained 2D GSM simulation results are discussed comparison with predictions of some other simulation approaches and results of appropriate experiments.

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Section: Discussionmentioning

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Section: Simulation Approachmentioning

confidence: 99%

Section: Simulation Approachmentioning

confidence: 99%

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The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes

Ligatchev¹

2020

ECS J. Solid State Sci. Technol.

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“…~8 To demonstrate feasibility as a manufacturable process, processing steps subsequent to deposition must insure that the final resistivity approaches that of pure Cu, 1.7 ~l-cm. 19 Other elements have been proposed as potential alloying elements for Cu in integrated circuit applications. Cu alloyed with 1 a/o Cr was found to have better adhesion to SiO2 without sacrificing low resistivity, 2~ although more than 15 a/o was required for better adhesion to A120~.…”

Section: Introductionmentioning

confidence: 99%

Dealloying Kinetics of Cu1 − x Ti x on SiO2 Using In Situ X‐Ray Diffraction

Russell

Alford

Mayer

1995

J. Electrochem. Soc.

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We study the dealloying of Ti from Cut_xTi x (x ~ I0 atom percent) alloy films on oxidized Si substrates in the 6 5 temperature range of 375 to 490~ and an estimated u2 partial pressure of -i0-to i0-Tort. Reaction products were determined to be TiO and Ti203 and possibly TiO2 at the free surface, and TiO at the SiO2 interface, according to Rutherford backseattering spectrometry and Auger electron spectroscopy. We found that the Cu lattice parameter varies linearly with Ti concentration, and this variation is independent of temperature in this composition range. As a consequence, we were able to study the dealloying kinetics using in situ x-ray diffraction by monitoring the time dependence of the Cu lattice parameter. We observe that the reaction kinetics obey a parabolic rate law, i.e., X~,re~ct~d = kt, with a single activation energy of 1.6 _+ 0.i eV, suggesting that one process governs dealloying kinetics over this temperature range. In addition, we note a pronounced composition dependence, in that the reaction rate increases sharply with increasing Ti concentration. These observations suggest that Ti diffusion in Cu is the rate-limiting kinetic process for the dealloying reactions in this temperature regime. We model the dealloying reaction and in so doing estimate the diffusion coefficient for Ti in these alloy films.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP

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Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

Ozmen,

Diallo,

Suna Karatekin

et al. 2024

ChemistrySelect

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This research investigates the optical, structural, electrical, and photoelectrochemical characteristics of CdS/CdSe heterojunctions formed on both ITO and p–Si substrates. The deposition of CdS and CdSe films was carried out using the chemical bath deposition method, which is economical and simple method. The optical, structural, and electrical properties of CdS/CdSe heterojunctions were analyzed through UV–Vis spectrometry, photoluminescence (PL) spectroscopy, field emission–scanning electron microscopy (FE‐SEM), X‐ray diffraction (XRD), Raman spectroscopy, and Hall‐effect measurements. Furthermore, Mott–Schottky analysis was employed to investigate the electrochemical properties of the semiconductor CdS/CdSe heterojunctions on both ITO and p–Si substrates. Additionally, the photoelectrochemical investigations of CdS/CdSe heterojunctions on ITO and p–Si substrates were conducted by electrochemical analyses using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and photocurrent – time plots under both dark and illuminated conditions.

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Introduction to Solid State Physicsby C. Kittel

Cited by 6 publications

References 0 publications

The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes

The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes

Dealloying Kinetics of Cu1 − x Ti x on SiO2 Using In Situ X‐Ray Diffraction

Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

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Introduction to Solid State Physicsby C. Kittel

Cited by 6 publications

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The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS2, and WS2 Flakes

The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS2, and WS2 Flakes

Dealloying Kinetics of Cu1 − x Ti x on SiO2 Using In Situ X‐Ray Diffraction

Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p–Si Substrates

Contact Info

Product

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The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes

The “Generalized Skettrup Model” and Lattice Thermal Capacity of Graphene, h-BN, MoS₂, and WS₂ Flakes