(Invited) Electron Emission Study of Planar-Type Electron Emission Devices Based on Nanocrystalline Silicon

Abstract

The electron emission properties of planar-type electron emission devices based on oxidized nanocrystalline silicon (nc-Si) were investigated to improve the performance. The emission current and the emission efficiency are higher for the thinner gate electrode, and the emission efficiency was enhanced to 4 % by reducing the topmost electrode thickness. The emission current was enhanced by about two orders of magnitude by laser irradiation. In addition, we demonstrated laser pulse-induced, optically-modulated electron emission from the nc-Si based device.