<i>(Invited) </i>Oxygen Precipitation in Highly Doped Silicon Substrates

Porrini, M.; Voronkov, V. V.; Giannattasio, A.

doi:10.1149/08610.0073ecst

Cited by 3 publications

(4 citation statements)

References 21 publications

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“…(ii) The ultra-heavy (> 5 × 10 19 cm −3 ) doping of B suppresses the interstitial cluster formation, and that of P or As suppresses the void formation. 3,29,30 However, the mechanism behind this suppression is still not clear. 4,30 Because the ultra-heavily doped Si is necessary, especially for power device applications, the mechanism should be clarified.…”

Section: The Remaining Problems Related To the Topic Of This Paper-(i)mentioning

confidence: 99%

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Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Sueoka

Mukaiyama²,

Maeda³

et al. 2019

ECS J. Solid State Sci. Technol.

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To explain and engineer intrinsic point defect behavior in large-diameter single crystal Si grown using the Czochralski (CZ) method, a unified model valid for all pulling processes, crystal resistivities, and electrically inactive impurity concentrations that couples the effects of thermal stress, dopants, and interstitial oxygen (O i ) atoms is needed. We determined the thermal equilibrium concentration of intrinsic point defects (vacancy V and self-interstitial Si I) in CZ-Si crystal as functions of thermal stresses, type and concentration of dopant, and the concentration of O i atoms. Global heat transfer during crystal growth in a puller was simulated using STR Group's CGSim software package. A visual distribution of V and I concentrations inside a growing doped and thermally stressed Si ingot is very useful for improving the quality of large-diameter CZ-Si crystals.

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Section: The Remaining Problems Related To the Topic Of This Paper-(i)mentioning

confidence: 99%

“…3,29,30 However, the mechanism behind this suppression is still not clear. 4,30 Because the ultra-heavily doped Si is necessary, especially for power device applications, the mechanism should be clarified.…”

Section: The Remaining Problems Related To the Topic Of This Paper-(i)mentioning

confidence: 99%

Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Sueoka

Mukaiyama²,

Maeda³

et al. 2019

ECS J. Solid State Sci. Technol.

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“…Note that the in situ doping of arsenic impurities is often adopted to grow the heavily arsenic‐doped Czochralski (HAs‐CZ) silicon crystal. [ 16,17 ] The HAs‐CZ silicon wafers generally act as the substrates of epitaxial wafers used for manufacturing power devices. [ 18,19 ] In order to reduce the on‐resistance of devices, the substrate resistivity is required to be reduced as low as possible.…”

Section: Introductionmentioning

confidence: 99%

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Wu¹,

Zhao²,

et al. 2022

Physica Rapid Research Ltrs

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Heavily arsenic‐doped Czochralski (HAs‐CZ) silicon is an important substrate material for manufacturing power electronic devices. The arsenic impurities may be in a supersaturated status in a certain temperature range during the HAs‐CZ silicon crystal growth or the device fabrication. Then, whether and how the arsenic impurities can precipitate in HAs‐CZ silicon is an intriguing and practically significant issue that has never been addressed. Herein, it is first found that arsenic precipitation can occur in HAs‐CZ silicon when subjected to appropriately prolonged anneals at 550–950 °C. The resulting second‐phase precipitates are confirmed to be of orthorhombic SiAs phase, with the lattice parameters of a = 7.12 Å, b = 9.11 Å, and c = 9.00 Å, through systematic transmission electron microscopy characterizations. Moreover, it is discovered that the presence of vacancies/interstitial silicon atoms in HAs‐CZ silicon promotes/inhibits arsenic precipitation.

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“…Metal impurities such as copper, iron, and nickel in silicon wafers have a detrimental impact on the performance and yield of semiconductor devices. Therefore, various studies have been conducted on gettering techniques to remove metal impurities from the active region of devices, and gettering techniques using oxide precipitates, [1][2][3][4][5][6][7][8][9] polysilicon back seal (PBS), [5,10,11] ion implantation, [12][13][14] and shallow dopants in silicon [15][16][17][18][19][20] have been developed over the past few decades. In general, gettering mechanisms are divided into two types, relaxation gettering [2,21] and segregation gettering.…”

Section: Introductionmentioning

confidence: 99%

Gettering Mechanism of Copper in n‐Type Silicon Wafers

Ozaki

Torigoe

Mizuno

et al. 2019

Physica Status Solidi (a)

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The dependence of the gettering efficiency for copper impurity in n‐type silicon wafers on the concentration of a dopant such as phosphorus, arsenic, or antimony is investigated by chemical analysis of the copper concentration and the observation of copper precipitates. It is found that the gettering efficiency decreases gradually with increasing dopant concentration in the range of 1014–1019 cm−3 and increases rapidly at concentrations higher than 1019 cm−3. Copper precipitates are observed in the bulk of silicon wafers doped with phosphorus in the concentration range of 1014–1019 cm−3, suggesting that the relaxation gettering of copper occurs. In contrast, no copper precipitates are observed at concentrations above 1019 cm−3. It is suggested that segregation gettering occurs as a result of the pairing reaction between copper and heavily doped phosphorus. It is concluded that the gettering mechanism of copper in n‐type silicon wafers changes from relaxation gettering to segregation gettering with increasing dopant concentration.

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(Invited) Oxygen Precipitation in Highly Doped Silicon Substrates

Cited by 3 publications

References 21 publications

Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Gettering Mechanism of Copper in n‐Type Silicon Wafers

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