(Invited) Si_1-xGe_x/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

Abstract

In this paper, the recent progress on Si1-xGex/Si based high performance detector structures is presented. The process optimization of the detector by means of high TCR, low 1/f noise and appropriate resistance is summarized. The method of integrating the developed Si1-xGex/Si multi quantum well (MQW) detector structures into a 130 nm BiCMOS process is provided. The optimization studies required for the full integration of the suspended uncooled microbolometer device are presented.

Heteroepitaxy of group IV materials for future device application

“…[5][6][7][8][9] In order to use the benefits of material properties and engineered band gap offset, emerging devices e.g. Ge photodiode, [10][11][12] multi-quantum well (MQW) microbolometers, [13][14][15] MQW cascade lasers [16][17][18][19][20] and quantum computing devices [21][22][23] are also widely investigated. To realize heteroepitaxial processes in a desired manner, strain in the films near the heterointerface and beneath the growth front is a key.…”