<i>L</i>-valley electron transport in GaAs-AlAs double-barrier resonant tunneling structures studied by ballistic electron emission microscopy

Rakoczy, D.; Strasser, G.; Strahberger, C.; Smoliner, J.

doi:10.1103/physrevb.66.033309

Cited by 13 publications

(6 citation statements)

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“…[82]). This suppression of -X transport at low temperatures was also observed in previous experiments [99] as well as by other groups [69].…”

Section: The Influence Of Doping In Alas Single Barriers On the Curre...supporting

confidence: 88%

“…Later, a DBRTD in the X valley band profile of an AlAs-GaAs-AlAs-GaAs-AlAs structure was demonstrated by Shieh and Lee [95]. With BEEM, the positions of higher conduction band minima had already been determined on bulk GaAs as well as on single AlAs barriers, before the general interest focused on the ballistic transport behaviour of RTDs on the GaAs/AlGaAs [64,69,[96][97][98][99], but also on the InAs/AlSb material system [100].…”

Section: Stm-based Hot Electron Microscopy/spectroscopy Of Heterostru...mentioning

confidence: 99%

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Hot electron spectroscopy and microscopy

2004

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Semiconductor heterostructures, such as double-barrier resonant tunnelling diodes and superlattices, are nowadays used for many applications. One very versatile and powerful method to study electronic transport in heterostructures is hot electron spectroscopy. Hot electron spectroscopy can be carried out in two complementary versions: device-based techniques usually employ so-called hot electron transistors (HETs), while ballistic electron emission microscopy (BEEM) uses a scanning tunnelling microscope (STM) as the source of ballistic electrons.In this review, spectroscopic results obtained by these two methods are compared and discussed. It is shown that BEEM results are strongly influenced by electron refraction effects, while the behaviour of HET devices is dominated by inelastic scattering effects in the base and drift region of the device. Thus, STM-based BEEM/S and HET-based spectroscopy are genuinely complementary methods, which yield supplementary results.

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“…[82]). This suppression of -X transport at low temperatures was also observed in previous experiments [99] as well as by other groups [69].…”

Section: The Influence Of Doping In Alas Single Barriers On the Curre...supporting

confidence: 88%

Section: Stm-based Hot Electron Microscopy/spectroscopy Of Heterostru...mentioning

confidence: 99%

Hot electron spectroscopy and microscopy

2004

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“…Alternatively, such effects can result from quasidiscrete states arising from quantum confinement in artificially fabricated structures such as quantum dots or resonant tunneling diodes. [18][19][20] In each case, electron transport is favored at certain energies due to an increase in the number of available states, affecting the shape of BEEM spectra.…”

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confidence: 99%

Ballistic electron transport properties across the manganese/silicon interface

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Wolter

Kidd

et al. 2013

Applied Physics Letters

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Ballistic electron transmission is used to investigate electron transport across the Au/Mn/Si and Au/Si interfaces. The Au/Mn/Si spectra exhibit multiple threshold voltages above the Schottky barrier. The energetic spacing of these threshold voltages is found to vary with Mn thickness. These features are believed to be the result of resonant transport. Transmission calculations match the experimental data exceedingly well, but only when one accounts for reflections at the Au/Mn interface. Interestingly, scattering at the Mn/Si interface is over an order of magnitude less than at the Au/Si interface, suggesting a better matching of available states at the Mn/Si interface.

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“…4 In our previous work on ballistic transport, our group has, e.g., determined the energetic position of the miniband in GaAs-AlGaAs superlattices 5 and investigated resonant tunneling through L-valley states of GaAs-AlAs DBRTDs. 6 One effect influencing the ballistic current on all Au-GaAs samples is the large difference in effective mass, which the ballistic electrons experience at the Au-GaAs interface. For electrons crossing this interface ballistically, the parallel momentum k ʈ is conserved.…”

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confidence: 99%

“…The only visible feature in the BEEM spectra at higher V t is a second current onset which is due to the resonant levels existing in the L-valley of the DBRTD. 6 With our setup, we can shift the energetic position of the resonant level inside the DBRTD by applying a voltage V c between the collector and the base and, therefore, tilting the band structure ͑see Fig. 1͒.…”

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confidence: 99%