1974
DOI: 10.1002/j.1538-7305.1974.tb02735.x
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L5 System: Ultralinear Transistors

Abstract: A family of ultralinear npn transistors has been developed for use in the L5 coaxial‐carrier system. These 3‐GHz devices are characterized by extremely low distortion and noise figure. The transistor comprises an interdigitated base‐emitter structure with a heavily doped base grid connected to the peripheral base metal contact. The emitter contact is overlaid on the base‐emitter region. Contact metallurgy consists of a platinum silicide, titanium, platinum, and gold system. The transistor is a highly reliable … Show more

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