n-CdS/p-Si heterojunction solar cells

Abstract

The photovoltaic properties of n-CdS/p-Si heterojunctions prepared by vacuum deposition of CdS:In on single-crystal silicon substrates are reported. Power conversion efficiencies of 9.5% (cell area 1.5 cm2) have been obtained. The I-V characteristics and their temperature dependance suggest tunneling as the dominant conduction mechanism.

Recent Developments in Monte Carlo Simulations of Lattice Models for Polymer Systems

“…A completely different but certainly no less important direction concerns the application of advanced off-lattice Monte Carlo methods to study problems such as the structure of interfaces between a crystalline substrate and amorphous regions of polymers (applying algorithms involving double-bridging and other sophisticated nonlocal moves for chemically realistic atomistic models 157 ), development of coarse-grained models for the description of the equation of state of polymer solutions, 158 and the development of coarse-graining strategies for dense polymer melts. 159 A very interesting approach, applicable for semidilute polymer solutions 160 and polymer brushes 161 involves a coarse-graining where a (soft) particle does not correspond just only to a small number of successive monomers along a chain, but represents a whole "blob". Such models are intermediate between the standard models for polymers, as treated here, and very crude models where a whole polymer coil is represented by one soft particle.…”

Effect of boron-doping on the electroluminescence properties of CdS/Si heterostructure based on Si nanoporous pillar array

“…However, with B concentration being higher than 0.01, the excess B atoms would form crystal defects which would decrease the carrier concentration. Meanwhile, the high density of interface states would become dominate [20]. So, the red emission is greatly enhanced while the green emission is obviously suppressed.…”

New Configuration of Solid‐State Neutron Detector Made Possible with Solution‐Based Semiconductor Processing

“…This composite is deposited on p‐doped Si wafer in order to create 114 CdS/Si p‐n junction using a common solution containing 114 CdS precursor molecules and 10 B 2 O 3 . The p‐n junction is created at the 114 CdS/p‐Si interfacial region (a system that was used for photovoltaic device applications as well) 25, 26. This non‐vacuum fabrication route is appealing because the neutron sensitizing material can be dispersed throughout the 114 CdS host semiconductor simply by incorporating the neutron sensitizing precursor molecules in the common starting solution of the semiconductor precursor molecules.…”