2014
DOI: 10.1002/ange.201409479
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ortho‐, meta‐, and para‐Dihydroindenofluorene Derivatives as Host Materials for Phosphorescent OLEDs

Abstract: This work reports the first structure-properties relationship study of ortho [2,1-c]-, meta [1,2-a]-, and para [1,2-b]dihydroindenofluorenes, highlighting the influence of bridge rigidification on the electronic properties. This study has made it possible to devise an extended p-conjugated molecule with both a high triplet state energy level and excellent thermal and morphological stability. As a proof of concept, dihydroindenofluorenes were used as the host in sky-blue phosphorescent organic light-emitting di… Show more

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Cited by 25 publications
(8 citation statements)
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“…The same trend has been observed for p,m,o triphenyls. [49] Therefore, the trimeric compound 7 d has the lowest thermal stability (163 °C).…”
Section: Thermal Properties and Solubilitymentioning
confidence: 99%
“…The same trend has been observed for p,m,o triphenyls. [49] Therefore, the trimeric compound 7 d has the lowest thermal stability (163 °C).…”
Section: Thermal Properties and Solubilitymentioning
confidence: 99%
“…The exponential development of organic electronic leads to an always growing demand of new, highly efficient organic semiconductors (OSCs) adapted to their use in specific devices 1 including organic light-emitting diodes (OLED) based on fluorescent emitting materials, [2][3][4][5][6][7][8] or based on phosphorescent materials, [9][10][11][12][13][14][15][16][17][18][19] organic field-effect transistor (OFET) [20][21][22][23][24] or organic photovoltaic (OPV). 1,25 Historically, in the field of OFETs, the design of p-type materials (hole-transporting) such as pentacene, 26 oligothiophene 27 or bridged oligoarylene [28][29] 33 (see 1-4 structures in Chart 1).…”
Section: Introductionmentioning
confidence: 99%
“…Among the molecular features that allow the modulation of OSC properties, regioisomerism can have remarkable consequences on the properties of the molecules. 6,21,[37][38] A simple structural modification can indeed drastically influence the oxidation potentials, 3,6,11,[39][40][41] the fluorescence properties, [3][4][5] the intermolecular π-π stacking, [42][43] which determines the magnitude of the charge-transfer integral and thus the charge transport in OSC devices. An interesting example of such architecture modification inducing strong changes both in the film morphology and OFETs performances has been reported for 2D π-expanded quinoidal terthiophenes.…”
Section: Introductionmentioning
confidence: 99%
“…To guarantee a high E T , wide energy gap materials are usually designed ,. However, due to the deep HOMO and high LUMO levels of wide band gap materials, simultaneously injecting holes and electrons into the host is difficult and requires multilayer devices, leading to high costs and a high turn‐on voltage ( V on ).…”
Section: Introductionmentioning
confidence: 99%