<i>p</i>-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

Pandey, Sushil; Pandey, Saurabh Kumar; Awasthi, Vishnu; Kumar, Apurva; Deshpande, Uday; Gupta, Mukul; Mukherjee, Shaibal

doi:10.1063/1.4827379

Cited by 36 publications

(8 citation statements)

References 29 publications

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“…This method produces thin films with growth uniformity, reduced surface roughness and adhesion to the substrate even for films grown at room temperature. It is widely used for growth of ZnO and MgZnO films for optoelectronic device applications [20][21][22][23], TiO 2 , Ta 2 O 5 , ZrO 2 и SiO 2 thin films for optical coatings [24,25], VO 2 films for microbolometer uncooled IR sensors [26] and so on. In IBSD the oxide composition can be easily set by adjusting the O 2 partial pressure [27] in contrast to the ALD method wherein a reduction in the oxidant concentration increases carbon impurities in the film.…”

Section: Introductionmentioning

confidence: 99%

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Алиев¹,

Gerasimova²,

Кручинин³

et al. 2016

Mater. Res. Express

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Non-stoichiometric HfO x films of different chemical composition (x<2) were fabricated by ionbeam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O 2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf 4 O 7 suboxide and stoichiometric HfO 2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf 4 O 7 suboxide concentration is maximal at x=1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO 2 , when annealed at high temperature.

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Section: Introductionmentioning

confidence: 99%

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Алиев¹,

Gerasimova²,

Кручинин³

et al. 2016

Mater. Res. Express

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“…A working electrode of GZO with a thickness of 150 nm on p‐Si (111) was generated by means of dual ion beam sputtering deposition (DIBSD) technique. The detailed growth procedure with the DIBSD system was described elsewhere …”

Section: Methodsmentioning

confidence: 99%

Lamellar Peptide–Cadmium‐Doped Zinc Oxide Nanohybrids That Emit White Light

et al. 2016

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A variety of hybrid nanostructures have been developed that emit white light. Two different white‐light‐emitting systems are reported. These are cadmium‐doped zinc oxide nanosheets and complex lamellar nanostructures that consist of alternating inorganic cadmium‐doped zinc oxide domains with the self‐assembled aromatic‐capped peptide BPI‐FF‐OH (BPI: benzo[ghi]perylene monoimide, F: d‐phenylalanine). An electrochemical method is employed to synthesize cadmium‐doped zinc oxide nanosheets and lamellar organic/cadmium‐doped zinc oxide nanoflakes on a gallium‐doped ZnO/p‐Si (111) substrate. External structural features and internal structural ordering of wurtzite cadmium‐doped zinc oxide and lamellar organic/cadmium‐doped zinc oxide nanohybrids are characterized by small‐angle X‐ray scattering, XRD, field‐emission SEM, energy‐dispersive X‐ray spectroscopy, secondary‐ion mass spectrometry, ellipsometry, and photoluminescence spectroscopy. Cadmium‐doped zinc oxide nanosheets and lamellar organic/cadmium‐doped zinc oxide hybrids emit white light with a broad emission covering the visible spectrum from λ=415 to 700 nm. Characteristic white‐light emissions of both materials were well characterized by photoluminescence studies. The white‐light luminescence is attributed to cadmium doping in the zinc oxide crystal and the presence of the dipeptide‐functionalized BPI fluorophore in the lamellar nanohybrid.

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“…Pandey et al 84 fabricated p-ZnO:Sb by dual ion beam sputtering. This technique can produce high-quality films with a relatively superior constituent stoichiometry, uniformity, and adhesion to the substrate.…”

Section: Ways To Improve Mobilitymentioning

confidence: 99%

ZnO with p-Type Doping: Recent Approaches and Applications

Yang,

Wang,

et al. 2023

ACS Appl. Electron. Mater.

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ZnO is a significant semiconductor material with the characteristics of direct band gap, large exciton binding energy, and easy growth of high-quality nanostructures, and it is widely used in various fields. However, obtaining high-quality p-type ZnO has become a significant obstacle to the wide application of ZnO. The research on p-ZnO started several decades ago and is regarded as the research focus. Many researchers have obtained high-quality p-ZnO by chemical vapor deposition (CVD) and physical vapor deposition (PVD). To obtain high-quality p-ZnO, researchers have used some “better” techniques to improve the crystal quality and mobility of p-ZnO, such as molecular beam epitaxy (MBE) and post-treatment. This review provides an overview of some methods for obtaining high-quality p-ZnO, such as increasing the acceptor concentration, shallowing acceptor energy levels, and reducing donor defects. In addition, we also review the applications of p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing, bionic materials, and other fields.

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p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

Cited by 36 publications

References 29 publications

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Lamellar Peptide–Cadmium‐Doped Zinc Oxide Nanohybrids That Emit White Light

ZnO with p-Type Doping: Recent Approaches and Applications

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