p-Type High-Performance WSi2N4 MOSFETs with the Ultrashort Scale of Sub-5 nm

Liu, Xianghe; Mao, Yuliang

doi:10.1021/acsaelm.3c01216

ACS Appl. Electron. Mater.

2023

DOI: 10.1021/acsaelm.3c01216

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p-Type High-Performance WSi₂N₄ MOSFETs with the Ultrashort Scale of Sub-5 nm

Xianghe Liu,

Yuliang Mao

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Cited by 4 publications

References 53 publications

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Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As)

Wang,

Li,

et al. 2024

J. Electron. Mater.

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Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As)

Wang,

Li,

et al. 2024

J. Electron. Mater.

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High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

Ma,

Wang,

et al. 2025

Materials Science and Engineering: B

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First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor

Ghobadi,

Gholami Rudi,

Soleimani-Amiri

2024

ACS Appl. Nano Mater.

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Exploring new two-dimensional materials as the channel of ultrascaled field effect transistors (FETs) is in great demand to sustain Moore’s law. Herein, using first-principles calculations, we propose Janus MgZnXY (X, YO, S, Se, and Te; X ≠ Y) monolayers and examine their energetic, dynamic, and thermal stability. The electronic band structures reveal that all stable structures are semiconductors with bandgaps ranging from 2.03 to 3.40 eV (HSE06) and extremely high electron mobilities. Inspired by the exceptional intrinsic properties of the MgZnXY family, we investigate the performance of a double-gate n-type field effect transistor (DG-nFET) with a MgZnSSe monolayer as the channel material. It is shown that sub-5 nm gate length MgZnSSe DG-nFETs with suitable underlap length and contacts’ doping outperform the International Technology Roadmap for Semiconductors with high-performance (HP) and low-power (LP) standards. It is also revealed that the impressively high on-current of 3620 μA/μm and ultralow delay time and power-delay product of 0.064 ps and 0.149 fJ/μm, respectively, can be achieved for HP MgZnSSe DG-nFET. In addition, we investigate the gate-control ability of the proposed device and show that the structures with electrodes’ doping of 1 × 1013 and 2 × 1013 cm–2 can give subthreshold swings down to 73 and 75 mV/dec, respectively. Our results demonstrate that the proposed MgZnXY monolayers have great potential in future competitive short-channel FETs.

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p-Type High-Performance WSi₂N₄ MOSFETs with the Ultrashort Scale of Sub-5 nm

Cited by 4 publications

References 53 publications

Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As)

Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As)

High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor

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