Indium tin oxide (ITO) thin films suffer from poor chemical
stability
at high temperatures because of the instability of point defects and
structural variations. An interface design strategy was proposed herein
to improve this situation, where a robust ITO-based thin film with
a column-layer structure was fabricated. Three types of column-layer
ITO thin films were fabricated via magnetron sputtering. By tuning
the interfaces, we controlled the effective mass and weighted mobility,
enhancing the electrical conductivity (2.17 × 106 S
m–1) and power factor (1138 μW m–1 K–2). The crack propagation path was prolonged
because of the profuse interfaces between the columns and layers in
the alternate thin films. Thus, enhanced nanohardness (16.5 GPa) was
obtained. The structural evolution and performance of the column-layer
ITO thin films annealed under different conditions were investigated.
The atoms were restricted by the profuse interfaces, resulting in
high-temperature stability. The results demonstrate that the interface
design of ITO thin films can efficiently modify the stability of conductive
ceramics over a wide temperature range, which has significant potential
for applications in microdevices and aero engines.