I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

Saidov, A. S.; Leyderman, A. Yu.; Usmonov, Sh. N.; Kholikov, Khomidkhodzha

doi:10.1134/s1063782609040022

Cited by 13 publications

(3 citation statements)

References 2 publications

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“…We had such a task that the obtained structures had great spectral and integral sensitivity, and these structures, absorb electromagnetic radiation from violet to infrared. Such a structure can be obtained between two compounds, as in the works [3,4]. But the spectral and integral sensitivities were not so great in these structures.…”

Section: Introductionmentioning

confidence: 98%

Obtaining new types of compounds between silicon and cadmium sulfide

Сапаев

2023

E3S Web of Conf.

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The n+CdS-nCdS-nSi+ structures were obtained, and their volt-ampere characteristics at different temperatures were studied. The dependence of the volt-ampere characteristic shows that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n+CdS-nCdS-nSi+ structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 µW/cm2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10µW·s it has integral sensitivity ≈21 A/I'm (2310 A/W) at bias voltage U=10V.

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Section: Introductionmentioning

confidence: 98%

Obtaining new types of compounds between silicon and cadmium sulfide

Сапаев

2023

E3S Web of Conf.

View full text Add to dashboard Cite

show abstract

“…We had such a task that the obtained structures had great spectral and integral sensitivity, as well as, these structures absorb electromagnetic radiation from violet to infrared. Such a structure can be obtained on the basis between two compounds as in the works [3,4]. But in these structures the spectral and integral sensitivities were not so great.…”

Section: Introductionmentioning

confidence: 99%

Obtaining new types of compounds between silicon and cadmium sulfide

Сапаев

2023

E3S Web of Conf.

View full text Add to dashboard Cite

The n+CdS-nCdS-nSi+ structures were obtained and their volt-ampere characteristics at different temperatures were studied. From the dependence of the volt-ampere characteristic it is shown that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n+CdS-nCdS-nSi+structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 μW/cm2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10μW∙s it has integral sensitivity ≈21 A/I’m (2310 A/W) at bias voltage U=10V.

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“…Later, it was experimentally observed in semiconductor structures made of different materials, in particular, zinc doped silicon [2,3], gold doped sili con [4], gallium arsenide [5], silicon-germanium alloy [6], and others. In recent years, this effect was observed in structures fabricated based on different solid solu tions, in particular, n Si-p (Si 2 ) 1 -x -y (Ge 2 ) x (GaAs) y [7], p Si-n (Si 2 ) 1 -x (CdS) x [8], p Si-n (GaSb) 1 -x (Si 2 ) x [9], n GaAs-p (InSb) 1 -x (Sn 2 ) x [10], and structures with a CdS-CdTe heterojunction [11].…”

Section: Introductionmentioning

confidence: 99%