I–V hysteresis of Pr0.7Ca0.3MnO3during TEM observation

Fujii, Takashi; Kaji, Haruo; Kondo, Hirofumi; Hamada, K.; Arita, Masashi; Takahashi, Yasuo

doi:10.1088/1757-899x/8/1/012033

Cited by 24 publications

(23 citation statements)

References 11 publications

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“…Further direct observation should be needed to reveal the filament formation mechanisms more clearly by the use of in-situ TEM. [28][29] As described above, the conductive filament was expected to be formed at the CS edge. To investigate the CS in detail, cross sectional TEM observations with EDX 8 analyses were carried out (Fig.…”

Section: (C)mentioning

confidence: 96%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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We succeeded to observe the "conduction spot" (CS) in the capacitor structure ReRAM, which includes a conductive filament. In this study, we used NiO prepared by thermal oxidation at high temperature as 800°C. It requires a forming process by extra high voltage, which partly removes the top electrode from the resistance switched area.These experiments enabled us to observe the conductive filament directly in CS on NiO ReRAM by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). From SEM images, CSs seem to be produced by some kind of breakdown, but we confirmed the reproducible resistance switching at least 50 cycles after the CS generation. By means of energy dispersive X-ray spectroscopy (EDX) with TEM observations, drastic oxygen reduction was recognized in local area within CS of NiO films. Moreover, the CS area depended on the injection power for forming. These experimental data suggest that miniaturization of ReRAM will be achieved by reducing the injection power for forming. *

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Section: (C)mentioning

confidence: 96%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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“…In situ transmission electron microscopy (TEM), where TEM observations and physical (e.g., electrical) measurements have been simultaneously performed, [27][28][29][30][31][32][33][34][35][36][37] has attracted a great deal of attention to satisfy this demand. The numbers of such studies using piezo-controlled TEM holders have been increasing in the past few years.…”

Section: Introductionmentioning

confidence: 99%

“…The numbers of such studies using piezo-controlled TEM holders have been increasing in the past few years. For example, studies have been done on the appearance and disappearance of superstructures in PCMO by applying voltage, 30 I-V hysteresis of PCMO in TEM, 31 filament-like structural changes in TiO 2 , 32 and dynamical forming processes in NiO. 33 More detailed experimental results that would confirm the conduction mechanism during the switching process are required to enable the switching mechanism to be better understood.…”

Section: Introductionmentioning

confidence: 99%

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

et al. 2012

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In situ transmission electron microscopy (TEM) was carried out to investigate the dynamics of resistance switching in a solid electrolyte, Cu-Ge-S. By applying voltage to Pt-Ir/Cu-Ge-S/Pt-Ir, where Pt-Ir constituted the electrodes, a deposit containing conductive filaments composed mainly of Cu was formed around the cathode. As voltage continued to be applied, the deposit grew and finally narrow conductive filaments made contact with the anode. This corresponded to resistance switching from high-to low-resistance states (HRS and LRS). By alternating the voltage, the deposit contracted toward the cathode and detached from the anode. The resistance immediately changed from LRS to HRS. By applying voltage, the deposit containing Cu-based filaments grew and shrank, and resistance switching occurred at the electrolyte-anode interface. This conductive filament-formation model, which was recently reported, was experimentally confirmed with TEM through dynamic observations of the deposit-containing filaments.

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“…The first one was PCMO which shows the bipolar switching. [30][31][32] By applying the voltage with resistance change, structural change probably caused by oxygen migration was reported at the vicinity of the interface between the electrode and PCMO. 30,32 Importance of the electronic state around the interface was pointed out.…”

Section: Introductionmentioning

confidence: 99%

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

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We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

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I–V hysteresis of Pr_0.7Ca_0.3MnO₃during TEM observation

Cited by 24 publications

References 11 publications

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

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