I-V model of nano nMOSFETs incorporating drift and diffusion current

Huang, Heng-Sheng; Wang, Weilun; Wang, Mu‐Chun; Chao, Yu-Hao; Wang, Shea–Jue; Chen, Shuang-Yuan

doi:10.1016/j.vacuum.2018.05.033

Cited by 7 publications

(9 citation statements)

References 27 publications

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“…Based on the previous work [11], five checking points A, B, C, D, and E, as shown in Figure 3, were utilized to expose the carrier mobility μ(x) and the drift current (see Figure 3), where μ(x) was the function of the position x in the surface channel and the range of position x was from point B to point D. However, it was not enough to describe the whole behavior of an equivalent mobility μeq correlated to VDS, VGS, and Lmask, independent of position x. We incorporated various conditions with V DS , V GS , and L mask to reasonably describe the whole drive current and fit µ eq in Equations ( 1)-( 6),…”

Section: Experimental and Mobility Fittingmentioning

confidence: 99%

“…As a result, the drive current rises as the drain voltage increases for a nano-scale MOSFET. Adding the diffusion effect to the drive current model, the contribution of the diffusion current to the entire drive current is distinctly enhanced, especially in the current behavior of short-channel devices [11,12]. In other words, a larger source/drain voltage V DS will make a larger gradient of inversion charge density, causing a larger surface diffusion current.…”

Section: Introductionmentioning

confidence: 99%

“…In other words, a larger source/drain voltage V DS will make a larger gradient of inversion charge density, causing a larger surface diffusion current. However, as the V GS was fixed, the previous work [11] only changed one parameter (V DS ), in long-or short-channel devices, to fit the equivalent mobility µ eq accurately. The previous work treated it as a one-dimensional (1D) issue.…”

Section: Introductionmentioning

confidence: 99%

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Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Chao

Huang

et al. 2022

Crystals

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A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables VDS and VGS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models.

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Section: Experimental and Mobility Fittingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Chao

Huang

et al. 2022

Crystals

Self Cite

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show abstract

“…As a result, the drive current rises as the drain voltage increases for a nano-scale MOSFET. Adding the diffusion effect in drive-current model, the contribution of diffusion current in entire drive current is distinctly enhanced, especially in the current behavior of short channel devices [10]. In other words, a lager source/drain voltage VDS will make a lager gradient of inversion charge density causing a larger surface diffusion current.…”

Section: Introductionmentioning

confidence: 99%

“…II. EXPERIMENTAL AND FITTING THE MOBILITY Based on the previous work [10], the carrier mobility μ(x) should be the function of the position x in the surface channel. But it seems not enough to describe the whole behavior of an equivalent mobility μeq correlated to VDS, VGS, and Lmask, independent of the position x.…”

Section: Introductionmentioning

confidence: 99%

The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

Huang¹,

Huang²,

Wang³

et al. 2019

Preprint

Self Cite

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A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

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Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Wang

Chang

et al. 2021

2021 9th International Symposium on Next Generation Electronics (ISNE)

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I-V model of nano nMOSFETs incorporating drift and diffusion current

Cited by 7 publications

References 27 publications

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

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