β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters

Fu, Shihao; Wang, Yuefei; Han, Yurui; Li, Bingsheng; Zhang, Yunxiao; Ma, Jiangang; Fu, Zhendong; Xu, Haiyang; Liu, Yichun

doi:10.1109/led.2022.3192178

Cited by 24 publications

(11 citation statements)

References 31 publications

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“…Two steep absorption edges are observed around 255 nm and 360 nm, from which the optical bandgap of GaN and Ga 2 O 3 films are deduced to be ≈3.4 eV and ≈4.8 eV by Tauc's formulation. [ 27 ] SIMS elemental mappings of O (green) and N (blue) components over the same area show the successful fabrication of N‐doped βGa 2 O 3 films on GaN substrates, as indicated in Figure 1d.…”

Section: Resultsmentioning

confidence: 92%

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Han

Wang

et al. 2023

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An excellent broad‐spectrum (220–380 nm) UV photodetector, covering the UVA‐UVC wavelength range, with an ultrahigh detectivity of ≈1015 cm Hz1/2 W−1, is reported. It is based on a p‐β Ga2O3/n‐GaN heterojunction, in which p‐β Ga2O3 is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n‐GaN. XRD shows the oxide layer is (−201) preferred oriented β‐phase Ga2O3 films. SIMS and XPS indicate that the residual N atoms as dopants remain in β Ga2O3. XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the β Ga2O3 is p‐type conductive. Under a bias of −5 V, the photoresponsivity is 56 and 22 A W−1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 1015 cm Hz1/2 W−1 (255 nm) and 1.1 × 1015 cm Hz1/2 W−1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p‐β Ga2O3/n‐GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n‐type GaN layer.

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Section: Resultsmentioning

confidence: 92%

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Han

Wang

et al. 2023

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“…Under 0 V bias, the specific detectivity of devices with HTL can reach 2.20 × 10 12 Jones. As shown in Figure b, the rise time and fall time of the device (defined as the transition time between the 10 and 90% levels) are improved from 2.91 to 0.83 μs and from 3.01 to 0.71 μs, so the response speed is faster than those of the Sb 2 S 3 PDs without the HTL. Table lists some nanowire-structured Sb 2 S 3 detectors and other detectors used for VLC, and we can observe that the device designed in this article has high responsiveness and can be better applied to VLC.…”

Section: Resultsmentioning

confidence: 93%

High-Performance and Stable Sb₂S₃ Thin-Film Photodetectors for Potential Application in Visible Light Communication

Zhu

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Photodetectors (PDs) are critical parts of visible light communication (VLC) systems for achieving efficient photoelectronic conversion and high-fidelity transmission of signals. Antimony sulfide (Sb2S3) as a nontoxic, high optical absorption coefficient, and low-cost semiconductor becomes a promising candidate for applications in VLC systems. Particularly, Sb2S3 PDs were verified to have significantly weak light detection ability in the visible region. However, the response speed of Sb2S3 PDs with existing device structures is still relatively slow. Herein, through optimizing the device structure for the p–i–n type PDs, a p-type Sb2Se3 hole transport layer (HTL) is designed to enhance the built-in electric field and to accelerate the migration of photogenerated carriers for the high responsivity and fast response speed. The optimal thickness of the structure is obtained through the simulation of SCAPS-1D software, and the optimized devices show high-performance parameters, including a responsivity of 0.34 A W–1, a specific detectivity (D * ) of 2.20 × 1012 Jones, the −3 dB bandwidth of 440 kHz, high stability, and the value of the Sb2S3 PDs can reach 60% in the range of 360–600 nm, which indicates that the device is very suitable for working in the visible light band. In addition, the resulting Sb2S3 PD is successfully integrated into VLC systems by designing a matched light detection circuit. The results suggest that the Sb2S3 PDs are expected to provide an alternative to future VLC system applications.

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“…It is obvious that the NWs overlay on the electrodes. From the previous report, the dark current and photocurrent approximately linearly vary with the length and width of interdigital electrodes, which is caused by a rise of illumination area resulting in more carriers being collected. On the contrary, the currents decrease as the gap increases, which is attributed to the reduced intensity of the electric field and the slower carrier drift velocity caused by the increased gap.…”

Section: Methodsmentioning

confidence: 84%

Observation of Anomalous Negative Photoconductivity in Ga₂O₃ Nanowires: Implications for Broadening the Spectral Response of Photodetectors

Ruan

Meng

2023

ACS Appl. Nano Mater.

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Ga2O3 nanowires on silicon substrates were synthesized by the chemical vapor deposition method, and the Ga2O3-based metal–semiconductor–metal structured solar-blind photodetector was constructed successfully. Anomalously, the as-constructed photodetector exhibits negative photoconductivity under the illumination from 365 to 645 nm (sub-bandgap excitation) while it shows positive photoconductivity at the 254 nm illumination (super-bandgap excitation), which indicates that the photodetector has a wide spectral response extending to visible light. Under 365 nm illumination, the ratio of dark current to photocurrent, responsivity, and detectivity of the photodetector reach 5570, 0.2 A/W, and 2.52 × 1011 jones, respectively. A possible mechanism is proposed to explain the rare negative photoconductivity phenomenon. Herein, because the negative photoconductivity occurs in sub-bandgap excitations, the photodetector can detect photons whose energy is less than the bandgap of the sample, widening the spectral response. This work provides a method for wide spectrum photodetectors and other negative photoconductivity devices.

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β-Ga₂O₃-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters

Cited by 24 publications

References 31 publications

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

High-Performance and Stable Sb₂S₃ Thin-Film Photodetectors for Potential Application in Visible Light Communication

Observation of Anomalous Negative Photoconductivity in Ga₂O₃ Nanowires: Implications for Broadening the Spectral Response of Photodetectors

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β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters

Cited by 24 publications

References 31 publications

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

High-Performance and Stable Sb2S3 Thin-Film Photodetectors for Potential Application in Visible Light Communication

Observation of Anomalous Negative Photoconductivity in Ga2O3 Nanowires: Implications for Broadening the Spectral Response of Photodetectors

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β-Ga₂O₃-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

High-Performance and Stable Sb₂S₃ Thin-Film Photodetectors for Potential Application in Visible Light Communication

Observation of Anomalous Negative Photoconductivity in Ga₂O₃ Nanowires: Implications for Broadening the Spectral Response of Photodetectors