Identification and analysis of partial shading breakdown sites in CuInxGa(1-x)Se2 modules

Palmiotti, Elizabeth; Johnston, Steve; Gerber, Andreas; Guthrey, Harvey; Rockett, Angus; Mansfield, Lorelle M.; Silverman, Timothy J.; Al‐Jassim, Mowafak

doi:10.1016/j.solener.2017.12.019

Cited by 31 publications

(42 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In a previous study, the authors identified localized heating in forward‐ and reverse‐bias conditions at several locations in two CIGS PV cells . In the present work, we extend the previous analysis of these regions to include chemical and optoelectronic properties of the defects identified in Palmiotti et al, where thermal‐runaway events are likely to originate under reverse‐bias conditions.…”

Section: Characterization Of Reverse‐bias Breakdown Sitessupporting

confidence: 56%

“…Given the same magnitude of total shunt resistance for small and large area shunts, performance losses are much greater for smaller shunts because the greater thermal power density can govern the thermal/current feedback loop and the temperature of the cell, causing significant V oc loss. As suggested by Palmiotti et al, the deposition method, contamination during processing, and substrate cleaning may play a significant role in mitigating the formation of as‐grown inclusions and voids in the CIGS films . These features are easily controlled on the laboratory scale, but mitigation may present challenges at the industrial scale, which requires rapid production of large area structures.…”

Section: Discussionmentioning

confidence: 99%

“…EBIC images showing the laser marking of defects A (A) and B (B) and higher magnification EBIC images (C,D) showing enhanced recombination at these defects. Note that (C) is adapted from Palmiotti et al Cross‐section SEM images of defect A (E) and Defect B (F)…”

Section: Characterization Of Reverse‐bias Breakdown Sitesmentioning

confidence: 99%

“…Westin et al also reported that the CIGS film may be damaged at the CdS/ZnO interface as a result of heterogeneities in the CIGS film . In several studies, voids have been observed in the CIGS/CdS/transparent conducting oxide (TCO) interface region and at the CIGS/Mo back contact …”

Section: Introductionmentioning

confidence: 99%

“…In this work, we build on previous studies by Palmiotti et al and Nardone et al to further probe the structure of features before and after thermal‐runaway breakdown events and describe the experimental observations through a robust device model. Palmiotti et al demonstrated a process to identify sites where thermal‐runaway events are likely to occur without causing damage to the CIGS devices.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices

Guthrey

Nardone

Johnston

et al. 2019

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

Partial shading of series‐connected thin‐film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field‐deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as‐grown nonuniformities in the Cu(In,Ga)Se2 (CIGS) absorber layers as the points of origin for the damage induced under reverse‐bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse‐bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.

show abstract

Section: Characterization Of Reverse‐bias Breakdown Sitessupporting

confidence: 56%

Section: Discussionmentioning

confidence: 99%

Section: Characterization Of Reverse‐bias Breakdown Sitesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices

Guthrey

Nardone

Johnston

et al. 2019

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

show abstract

Degradation of Thin Film PV

2021

Physics of Thin‐Film Photovoltaics

View full text Add to dashboard Cite

Extraction and microscopic analysis of partial shading‐induced defects in a commercial CIGS PV module

Aninat¹,

Bakker²,

Jouard³

et al. 2022

Progress in Photovoltaics

View full text Add to dashboard Cite

The ever‐increasing instalment capacity of Cu (In, Ga)(Se, S)2‐based photovoltaics calls for a better understanding and control of their reliability. In this paper, we show how using a coring‐based method, small samples can be extracted from full size commercial modules, and prepared for lab‐scale analysis. The method is applied to a Cu (In, Ga)(Se, S)2 (CIGS) module where a non‐reversible, propagating (‘wormlike’) defect has been created in a controlled partial shading experiment. Through current–voltage, photoluminescence and illuminated lock‐in thermography analyses on an undamaged part of the module, the method used is shown to yield fully functional, undamaged active cells, with a photovoltaic conversion efficiency above the full module efficiency. Where the wormlike defects were present, a typical strong shunting behaviour is observed, as well as an increased sulphur content near the edge of the wormtrails. Furthermore, the wormlike defect propagation is shown to be strongly influenced by the present of specific features near the interconnects, which could be the result of manufacturing. These results demonstrate the potential of coring to analyse module failure with all the laboratory tools available. They also shed some light on how wormlike defects, which are a rare but serious hazard for CIGS modules reliability, can form and propagate in commercial, monolithically interconnected modules.

show abstract

Identification and analysis of partial shading breakdown sites in CuInxGa(1-x)Se2 modules

Cited by 31 publications

References 6 publications

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices

Degradation of Thin Film PV

Extraction and microscopic analysis of partial shading‐induced defects in a commercial CIGS PV module

Contact Info

Product

Resources

About

Identification and analysis of partial shading breakdown sites in CuInxGa(1-x)Se2 modules

Cited by 31 publications

References 6 publications

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se2 photovoltaic devices

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se2 photovoltaic devices

Degradation of Thin Film PV

Extraction and microscopic analysis of partial shading‐induced defects in a commercial CIGS PV module

Contact Info

Product

Resources

About

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices

Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se₂ photovoltaic devices